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formation in HfTiO4
films on SiO2
studied by Z-contrast scanning electron microscopy
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12.Joint Commission on Powder Diffraction Standards Card No. 73-1765.
13.Joint Commission on Powder Diffraction Standards Card No. 40-0794.
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28. D. J. Cherniak and E. B. Watson, Chem. Geol. 242, 470 (2007). This reference discusses the structural strains associated with Ti substitution on a Zr site in zircon, ZrSiO4, a sister material to HfSiO4.
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Hafnon (HfSiO4) as it is initially formed in a partially demixed film of hafnium titanate (HfTiO4) on fused SiO2 is studied by atomic number (Z) contrast high resolution scanning electron microscopy, x-ray diffraction, and Raman spectroscopy and microscopy. The results show exsoluted Ti is the catalyst for hafnon formation by a two-step reaction. Ti first reacts with SiO2 to produce a glassy Ti-silicate. Ti is then replaced by Hf in the silicate to produce HfSiO4. The results suggest this behavior is prototypical of other Ti-bearing ternary or higher order oxide films on SiO2 when film thermal instability involves Ti exsolution.
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