No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
formation in HfTiO4
films on SiO2
studied by Z-contrast scanning electron microscopy
11.Joint Commission on Powder Diffraction Standards Card No. 78-0050.
12.Joint Commission on Powder Diffraction Standards Card No. 73-1765.
13.Joint Commission on Powder Diffraction Standards Card No. 40-0794.
19. J. Goldstein, D. Newbury, D. Joy, C. Lyman, P. Echlin, E. Lifshin, L. Saywer, and J. Michael, Scanning Electron Microscopy and X-ray Microanalysis, 3rd ed. (Springer Science and Business Media, New York, 2003).
28. D. J. Cherniak and E. B. Watson, Chem. Geol. 242, 470 (2007). This reference discusses the structural strains associated with Ti substitution on a Zr site in zircon, ZrSiO4, a sister material to HfSiO4.
Article metrics loading...
Hafnon (HfSiO4) as it is initially formed in a partially demixed film of hafnium titanate (HfTiO4) on fused SiO2 is studied by atomic number (Z) contrast high resolution scanning electron microscopy, x-ray diffraction, and Raman spectroscopy and microscopy. The results show exsoluted Ti is the catalyst for hafnon formation by a two-step reaction. Ti first reacts with SiO2 to produce a glassy Ti-silicate. Ti is then replaced by Hf in the silicate to produce HfSiO4. The results suggest this behavior is prototypical of other Ti-bearing ternary or higher order oxide films on SiO2 when film thermal instability involves Ti exsolution.
Full text loading...
Most read this month