Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/aplmater/1/3/10.1063/1.4820421
1.
1. D. Mian and Z. Lin, in Proceedings of the 8th IEEE Conference on Nanotechnology (NANO) (IEEE, Arlington, Texas 2008), p. 692.
2.
2. J. J. Huang, T. H. Hou, C. W. Hsu, Y. M. Tseng, W. H. Chang, W. Y. Jang, and C. H. Lin, Jpn. J. Appl. Phys. 51(4 PART 2), 04DD09 (2012).
http://dx.doi.org/10.1143/JJAP.51.04DD09
3.
3. K. Tsunoda, Y. Fukizumi, J. R. Jameson, Z. Wang, P. B. Griffin, and Y. Nishi, Appl. Phys. Lett. (USA) 90(11), 113501 (2007).
http://dx.doi.org/10.1063/1.2712777
4.
4. S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D. S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J. S. Kim, J. S. Choi, and B. H. Park, Appl. Phys. Lett. (USA) 85(23), 5655 (2004).
http://dx.doi.org/10.1063/1.1831560
5.
5. Z. Wei, Y. Kanzawa, K. Arita, Y. Katoh, K. Wawai, S. Muraoka, S. Mitani, S. Fujii, K. Katayama, M. Lijima, T. Mikawa, T. Ninomiya, R. Miyanaga, Y. Kawashima, K. Tsuji, A. Himeno, T. Okada, R. Azuma, K. Shimakawa, H. Sugaya, T. Takagi, R. Yasuhara, K. Horiba, H. Kumigashira, and M. Oshima, in Proceedings of the 2008 IEEE International Electron Devices Meeting, IEDM 2008 (San Francisco, CA, USA, 2008).
6.
6. W. Wu, X. Tong, R. Zhao, L. P. Shi, H. X. Yang, and Y. C. Yeo, in Proceedings of the 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011 (Shanghai, China, 2011), p. 103.
7.
7. L. J. Zhang, R. Huang, M. H. Zhu, S. Q. Qin, Y. B. Kuang, D. J. Gao, C. Y. Shi, and Y. Y. Wang, IEEE Electron Device Lett. (USA) 31(9), 966 (2010).
http://dx.doi.org/10.1109/LED.2010.2052091
8.
8. M. J. Lee, Y. S. Park, D. S. Suh, E. H. Lee, S. Seo, D. C. Kim, R. Jung, B. S. Kang, S. E. Ahn, C. B. Lee, D. H. Seo, Y. K. Cha, I. K. Yoo, J. S. Kim, and B. H. Park, Adv. Mater. 19(22), 3919 (2007).
http://dx.doi.org/10.1002/adma.200700251
9.
9. Y. Sasago, M. Kinoshita, H. Minemura, Y. Anzai, M. Tai, K. Kurotsuchi, S. Morita, T. Takahashi, T. Takahama, T. Morimoto, T. Mine, A. Shima, and T. Kobayashi, in Proceedings of the 2011 IEEE Symposium on VLSI Technology (IEEE, Honolulu, HI, USA, 2011), p. 96.
10.
10. D. S. Golubovic, A. H. Miranada, N. Akil, R. T. F. Van Schaijk, and M. J. Van Duuren, Microelectron. Eng. (Netherlands) 84(12), 2921 (2007).
http://dx.doi.org/10.1016/j.mee.2007.03.009
11.
11. H. Tanoto, S. F. Yoon, W. K. Loke, E. A. Fitzgerald, C. Dohrman, B. Narayanan, M. T. Doan, and C. H. Tung, J. Vac. Sci. Technol. B 24(1), 152 (2006).
http://dx.doi.org/10.1116/1.2151220
12.
12. X. Tong, W. Wu, Z. Liu, X. A. Tran, H. Y. Yu, and Y. C. Yeo, in Proceedings of the International Conference on Solid-State Devices and Materials (Kyoto, Japan, 2012), p. 614.
13.
13. R. Waser and M. Aono, Nat. Mater. 6(11), 833 (2007).
http://dx.doi.org/10.1038/nmat2023
14.
14. Z. Xu, S. F. Yoon, Y. C. Yeo, C. K. Chia, Y. B. Cheng, and G. K. Dalapati, J. Appl. Phys. 111(4), 044504 (2012).
http://dx.doi.org/10.1063/1.3686182
15.
15. M. J. Lee, Y. Park, B. S. Kang, S. E. Ahn, C. B. Lee, K. Kim, W. Xianyu, G. Stefanovich, J. H. Lee, S. J. Chung, Y. H. Kim, C. S. Lee, J. B. Park, and I. K. Yoo, in Proceedings of the 2007 IEEE International Electron Devices Meeting - IEDM ‘07 (IEEE, Washington, DC, USA, 2007), p. 771.
http://aip.metastore.ingenta.com/content/aip/journal/aplmater/1/3/10.1063/1.4820421
Loading
/content/aip/journal/aplmater/1/3/10.1063/1.4820421
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/aplmater/1/3/10.1063/1.4820421
2013-09-24
2016-10-01

Abstract

We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance ratio of over 10 within the voltage range 1.1 V–2.0 V. In the low resistance state, a forward-to-reverse current ratio of 60 was obtained at ±1 V.

Loading

Full text loading...

/deliver/fulltext/aip/journal/aplmater/1/3/1.4820421.html;jsessionid=82q0WXm4shWtd3ic9xTMEaCe.x-aip-live-02?itemId=/content/aip/journal/aplmater/1/3/10.1063/1.4820421&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/aplmater
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=APLMaterials.aip.org/1/3/10.1063/1.4820421&pageURL=http://scitation.aip.org/content/aip/journal/aplmater/1/3/10.1063/1.4820421'
Top,Right1,Right2,Right3,