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/content/aip/journal/aplmater/1/4/10.1063/1.4822441
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/content/aip/journal/aplmater/1/4/10.1063/1.4822441
2013-10-02
2016-10-01

Abstract

Scanning transmission electron microscopy in high angle annular dark field mode has been used to undertake a characterisation study with sub-nanometric spatial resolution of the barrier formation process for a Cu(Mn) alloy (90%/10%) deposited on SiO. Electron energy loss spectroscopy (EELS) measurements provide clear evidence for the expulsion of the alloying element to the dielectric interface as a function of thermal annealing where it chemically reacts with the SiO. Analysis of the Mn L intensity ratio in the EELS spectra indicates that the chemical composition in the barrier region which has a measured thickness of 2.6 nm is MnSiO.

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