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/content/aip/journal/aplmater/1/6/10.1063/1.4833935
1.
1. A. R. Guichard, D. N. Barsic, S. Sharma, T. I. Kamins, and M. L. Brongersma, Nano Lett. 6, 2140 (2006).
http://dx.doi.org/10.1021/nl061287m
2.
2. A. I. Boukai, Y. Bunimovich, J. Tahir-Kheli, J.-K. Yu, W. A. Goddard, and J. R. Heath, Nature (London) 451, 168 (2008).
http://dx.doi.org/10.1038/nature06458
3.
3. A. I. Hochbaum, R. Chen, R. D. Delgado, W. Liang, E. C. Garnett, M. Najarian, A. Majumdar, and P. Yang, Nature (London) 451, 163 (2008).
http://dx.doi.org/10.1038/nature06381
4.
4. R. Wagner and W. Ellis, Appl. Phys. Lett. 4, 89 (1964).
http://dx.doi.org/10.1063/1.1753975
5.
5. W. M. Bullis, Solid-State Electron. 9, 143 (1966).
http://dx.doi.org/10.1016/0038-1101(66)90085-2
6.
6. E. Simoen, Semicond. Sci. Technol. 2, 507 (1987)
http://dx.doi.org/10.1088/0268-1242/2/8/006
7.
7. T. I. Kamins, R. S. Williams, Y. Chen, Y. Chang, and Y. A. Chang, Appl. Phys. Lett. 76, 562 (2000).
http://dx.doi.org/10.1063/1.125852
8.
8. K. Kang, D. A. Kim, H.-S. Lee, C.-J. Kim, K.-E. Yang, and M.-H. Jo, Adv. Mater. 20, 4684 (2008).
http://dx.doi.org/10.1002/adma.200801764
9.
9. Y. Wang, V. Schmidt, S. Senz, and U. Gosele, Nat. Nanotechnol. 1, 186 (2006).
http://dx.doi.org/10.1038/nnano.2006.133
10.
10. E. Garnett, W. Liang, and P. Yang, Adv. Mater. 19, 2946 (2007).
http://dx.doi.org/10.1002/adma.200700288
11.
11. J. Lensch-Falk, E. Hemesath, D. Perea, and L. Lauhon, J. Mater. Chem. 19, 849 (2009).
http://dx.doi.org/10.1039/b817391e
12.
12. T. E. Clark, P. Nimmatoori, K.-K. Lew, L. Pan, J. M. Redwing, and E. C. Dickey, Nano Lett. 8, 1246 (2008).
http://dx.doi.org/10.1021/nl072849k
13.
13. N. Li, T. Y. Tan, and U. Gosele, Appl. Phys. A 90, 591 (2008).
http://dx.doi.org/10.1007/s00339-007-4376-z
14.
14. C.-Y. Wen, M. C. Reuter, J. Bruley, J. Tersoff, S. Kodambaka, E. A. Stach, and F. M. Ross, Science 326, 1247 (2009).
http://dx.doi.org/10.1126/science.1178606
15.
15. J. L. Lensch-Falk, E. R. Hemesath, and L. J. Lauhon, Nano Lett. 8, 2669 (2008).
http://dx.doi.org/10.1021/nl800933s
16.
16. Y. Xiang, L. Cao, S. Conesa-Boj, S. Estrade, J. Arbiol, F. Peiro, M. Heiss, I. Zardo, J. R. Morante, M. L. Brongersma, and A. Fontcuberta I. Morral, Nanotechnology 20, 245608 (2009).
http://dx.doi.org/10.1088/0957-4484/20/24/245608
17.
17. Y. Xiang, L. Cao, J. Arbiol, M. L. Brongersma, and A. Fontcuberta i Morral, Appl. Phys. Lett. 94, 163101 (2009).
http://dx.doi.org/10.1063/1.3116625
18.
18. S. Kodambaka, J. Tersoff, M. C. Reuter, and F. M. Ross, Science 316, 729 (2007).
http://dx.doi.org/10.1126/science.1139105
19.
19. S. V. Thombare, A. F. Marshall, and P. C. McIntyre, J. Appl. Phys. 112, 054325 (2012).
http://dx.doi.org/10.1063/1.4749797
20.
20. H. Adhikari, A. F. Marshall, C. E. D. Chidsey, and P. C. McIntyre, Nano Lett. 6, 318 (2006).
http://dx.doi.org/10.1021/nl052231f
21.
21. A. Nash, P. Nash, “Ge-Ni (Germanium-Nickel),” Binary Alloy Phase Diagrams, 2nd ed., edited by T. B. Massalski (ASM Alloy Phase Diagrams Center, 1990), Vol. 2.
22.
22.See supplementary material at http://dx.doi.org/10.1063/1.4833935 for TEM images of Ge nanowires grown at various temperatures and germane partial pressures for comparison and for the estimation of effective thickness of Ge deposited during VSS as well as VLS growth. [Supplementary Material]
23.
23. M. Cao, A. Wang, and K. C. Saraswat, J. Electrochem. Soc. 142, 1566 (1995).
http://dx.doi.org/10.1149/1.2048614
24.
24. H. Jagannathan, M. Deal, Y. Nishi, J. Woodruff, C. E. D. Chidsey, and P. C. McIntyre, J. Appl. Phys. 100, 024318 (2006).
http://dx.doi.org/10.1063/1.2219007
25.
25. G. A. Bootsma and H. J. Gassen, J. Cryst. Growth 10, 223 (1971).
http://dx.doi.org/10.1016/0022-0248(71)90188-6
26.
26. M. L. Green, Y. S. Ali, D. Brasen, and S. Nakahara, J. Electron. Mater. 17, 229 (1988).
http://dx.doi.org/10.1007/BF02652183
27.
27. P. M. Garone, J. C. Sturm, P. V. Schwartz, S. A. Schwarz, and B. J. Wilkens, Appl. Phys. Lett. 56, 1275 (1990).
http://dx.doi.org/10.1063/1.102535
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/content/aip/journal/aplmater/1/6/10.1063/1.4833935
2013-12-03
2016-12-05

Abstract

The kinetics of vapor-solid-solid (VSS) Ge nanowire growth using a Ni-based catalyst were investigated to probe the rate-limiting step for this complex nanoscale crystal growth process. The effects of key parameters such as temperature and precursor partial pressure on the nanowire growth rate were studied in order to gain detailed insights into the growth kinetics. Two different regimes were observed for VSS growth of Ge nanowires as function of temperature. At higher temperatures (345 °C–375 °C), kinetics data suggest that mass transport of germane precursor to the catalyst surface is rate limiting. At lower temperatures (<345 °C), either surface reaction of the GeH precursor on the catalyst or incorporation of Ge into the nanowire across the wire/catalyst interface is rate limiting.

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