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/content/aip/journal/aplmater/2/1/10.1063/1.4863075
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/content/aip/journal/aplmater/2/1/10.1063/1.4863075
2014-01-28
2016-06-28

Abstract

We study low temperature (90 °C) aqueous growth of single crystal zinc oxide structures through patterned PMMA molds of different sizes, shapes, and orientations. We demonstrate the ability to create 3D shapes with smooth vertical sidewalls. Although the unconstrained growth is influenced by the hexagonal geometry of the underlying crystal structure, the ZnO is shown to conform exactly to any shape patterned. Using electron backscatter diffraction and scanning electron microscopy we show that the mold orientation, in conjunction with control of the growth rates of the c and m planes of the ZnO, is crucial in determining the final structure shape.

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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=APLMaterials.aip.org/2/1/10.1063/1.4863075&pageURL=http://scitation.aip.org/content/aip/journal/aplmater/2/1/10.1063/1.4863075'
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