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1.J. A. Wilson and A. D. Yoffe, Adv. Phys. 18(73), 193 (1969).
2.Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, Nat. Nanotechnol. 7(11), 699 (2012).
3.P. Hajiyev, C. Cong, C. Qiu, and T. Yu, Sci. Rep. 3, 2593 (2013).
4.A. H. C. Neto, Phys. Rev. Lett. 86(19), 4382 (2001).
5.K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, Phys. Rev. Lett. 105(13), 136805 (2010).
6.L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y.-J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. C. Neto, and K. S. Novoselov, Science 340(6138), 1311 (2013);
6.L. Kou, T. Frauenheim, and C. Chen, J. Phys. Chem. Lett. 4(10), 1730 (2013).
7.M. Chhowalla, H. S. Shin, G. Eda, L.-J. Li, K. P. Loh, and H. Zhang, Nat. Chem. 5(4), 263 (2013);
7.K. Roy, M. Padmanabhan, S. Goswami, T. P. Sai, G. Ramalingam, S. Raghavan, and A. Ghosh, Nat. Nanotechnol. 8(11), 826 (2013).
8.W. Zhao, R. M. Ribeiro, M. Toh, A. Carvalho, C. Kloc, A. H. C. Neto, and G. Eda, Nano Lett. 13(11), 5627 (2013).
9.Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, ACS Nano 6(1), 74 (2011).
10.D. Xiao, G.-B. Liu, W. Feng, X. Xu, and W. Yao, Phys. Rev. Lett. 108(19), 196802 (2012).
11.A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, Nano Lett. 10(4), 1271 (2010).
12.Y. Wang, C. Cong, C. Qiu, and T. Yu, Small 9(17), 2857 (2013).
13.N. Peimyoo, J. Shang, W. Yang, Y. Wang, C. Cong, and T. Yu, “Thermal conductivity determination of suspended mono- and bilayer WS2 by Raman spectroscopy,” Nano Res. (submitted) .
14.Q. Ji, Y. Zhang, T. Gao, Y. Zhang, D. Ma, M. Liu, Y. Chen, X. Qiao, P.-H. Tan, M. Kan, J. Feng, Q. Sun, and Z. Liu, Nano Lett. 13(8), 3870 (2013).
15.H. R. Gutiérrez, N. Perea-López, A. L. Elías, A. Berkdemir, B. Wang, R. Lv, F. López-Urías, V. H. Crespi, H. Terrones, and M. Terrones, Nano Lett. 13(8), 3447 (2012).
16.Y. Zhang, Y. Zhang, Q. Ji, J. Ju, H. Yuan, J. Shi, T. Gao, D. Ma, M. Liu, Y. Chen, X. Song, H. Y. Hwang, Y. Cui, and Z. Liu, ACS Nano 7(10), 8963 (2013).
17.C. Cong, J. Shang, X. Wu, B. Cao, N. Peimyoo, C. Qiu, L. Sun, and T. Yu, Adv. Opt. Mater. 2(2), 131 (2014).
18.N. Peimyoo, J. Shang, C. Cong, X. Shen, X. Wu, E. K. L. Yeow, and T. Yu, ACS Nano 7(12), 10985 (2013).
19.J. Shang, X. Shen, C. Cong, N. Peimyoo, B. Cao, M. Eginligil, and T. Yu, “Observation of excitonic fine structure in a 2D transition metal dichalcogenide semiconductor ,'' (submitted).
20.N. Peimyoo, W. Yang, J. Shang, X. Shen, Y. Wang, and T. Yu, “Chemically Driven Tunable Light Emission of Charged and Neutral Excitons in Monolayer WS2,” ACS Nano. (submitted) .
21.Y. Zhang, T. Liu, B. Meng, X. Li, G. Liang, X. Hu, and Q. J. Wang, Nat. Commun. 4, 1811 (2013).
22.M. C. Lemme, F. H. L. Koppens, A. L. Falk, M. S. Rudner, H. Park, L. S. Levitov, and C. M. Marcus, Nano Lett. 11(10), 4134 (2011).
23.O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, Nat. Nanotechnol. 8(7), 497 (2013).
24.W. Zhang, C.-P. Chuu, J.-K. Huang, C.-H. Chen, M.-L. Tsai, Y.-H. Chang, C.-T. Liang, Y.-Z. Chen, Y.-L. Chueh, Jr-H. He, M.-Y. Chou, and L.-J. Li, Sci. Rep. 4, 3826 (2014).
25.W. J. Zhao, Z. Ghorannevis, L. Q. Chu, M. L. Toh, C. Kloc, P. H. Tan, and G. Eda, ACS Nano 7(1), 791 (2013).
26.N. A. Modine, A. M. Armstrong, M. H. Crawford, and W. W. Chow, J. Appl. Phys. 114(14), 144502 (2013).
27.S. H. Lee, D. Lee, W. S. Hwang, E. Hwang, D. Jena, and W. J. Yoo, Appl. Phys. Lett. 104(19), 193113 (2014).
28.N. Perea-López, A. L. Elías, A. Berkdemir, A. Castro-Beltran, H. R. Gutiérrez, S. Feng, R. Lv, T. Hayashi, F. López-Urías, and S. Ghosh, Adv. Funct. Mater. 23(44), 5511 (2013).
29.S. Jo, N. Ubrig, H. Berger, A. B. Kuzmenko, and A. F. Morpurgo, Nano Lett. 14(4), 2019 (2014).
30.B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer-Verlag, Berlin, 1984).
31.Y. Jiang, W. J. Zhang, J. S. Jie, X. M. Meng, X. Fan, and S.-T. Lee, Adv. Funct. Mater. 17(11), 1795 (2007).
32.G. Finkelstein, H. Shtrikman, and I. Bar-Joseph, Phys. Rev. Lett. 74(6), 976 (1995).
33.M. Buscema, D. J. Groenendijk, S. I. Blanter, G. A. Steele, H. S. J. van der Zant, and A. Castellanos-Gomez, Nano Lett. 14(6), 3347 (2014).

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High photoresponse can be achieved in monolayers of transition metal dichalcogenides. However, the response times are inconveniently limited by defects. Here, we report low temperature photoresponse of monolayer tungsten disulphide prepared by exfoliation and chemical vapour deposition (CVD) method. The exfoliated device exhibits n-type behaviour; while the CVD device exhibits intrinsic behaviour. In off state, the CVD device has four times larger ratio of photoresponse for laser on/off and photoresponse decay–rise times are 0.1 s (limited by our setup), while the exfoliated device has few seconds. These findings are discussed in terms of charge trapping and localization.


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