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Ultraviolet emission from low resistance Cu2
17.S. Thanikaikarasan, T. Mahalingam et al., J. New Mater. Electrochem. Syst. 13, 29 (2010).
21.P. S. Vasekar and T. P. Dhakal, Sol. Cells Res. Appl. Perspect. 6 , 145 (2013), ISBN 978-953-51-1003-3.
46.O. Madelung, Semiconductors Other than IV and III-Vs (Springer, Berlin, 1992), p. 149.
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SnO2 and Sn:In2O3 nanowires were grown on Si(001), and p-n junctions were fabricated in contact with p-type Cu 2S which exhibited rectifying current–voltage characteristics. Core-shell Cu 2 SnS 3/SnO2 and CuInS2/Sn:In2O3 nanowires were obtained by depositing copper and post-growth processing under H2S between 100 and 500 °C. These consist mainly of tetragonal rutile SnO2 and cubic bixbyite In2O3. We observe photoluminescence at 3.65 eV corresponding to band edge emission from SnO2 quantum dots in the Cu 2 SnS 3/SnO2 nanowires due to electrostatic confinement. The Cu 2 SnS 3/SnO2 nanowires assemblies had resistances of 100 Ω similar to CuInS2/In2O3 nanowires which exhibited photoluminescence at 3.0 eV.
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