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Dramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientation
2. G. Katsaros, P. Spathis, M. Stoffel, F. Fournel, M. Mongillo, V. Bouchiat, F. Lefloch, A. Rastelli, O. G. Schmidt, and S. De Franceschi, Nat. Nanotechnol. 5, 458 (2010).
8. M. Brehm, F. Montalenti, M. Grydlik, G. Vastola , H. Lichtenberger, N. Hrauda, M. J. Beck, T. Fromherz, F. Schäffler, L. Miglio, and G. Bauer, Phys. Rev. B 80, 205321 (2009).
12. D. Grutzmacher, T. Fromherz, C. Dais, J. Stangl, E. Muller, Y. Ekinci, H. H. Solak, H. Sigg , R. T. Lechner, E. Wintersberger, S. Birner, V. Holy, and G. Bauer, Nano Lett. 7, 3150 (2007).
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A dramatically enhanced self-assembly of GeSi quantum dots (QDs) is disclosed on slightly miscut Si (001) substrates, leading to extremely dense QDs and even a growth mode transition. The inherent mechanism is addressed in combination of the thermodynamics and the growth kinetics both affected by steps on the vicinal surface. Moreover, temperature-dependent photoluminescence spectra from dense GeSi QDs on the miscut substrate demonstrate a rather strong peak persistent up to 300 K, which is attributed to the well confinement of excitons in the dense GeSi QDs due to the absence of the wetting layer on the miscut substrate.
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