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Schottky contacts to In2O3
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1.
1. O. Bierwagen and J. S. Speck, Appl. Phys. Lett. 97, 072103 (2010).
http://dx.doi.org/10.1063/1.3480416
2.
2. N. Preissler, O. Bierwagen, A. T. Ramu, and J. S. Speck, Phys. Rev. B 88, 085305 (2013).
http://dx.doi.org/10.1103/PhysRevB.88.085305
3.
3. O. Bierwagen and J. S. Speck, Appl. Phys. Lett. 101, 102107 (2012).
http://dx.doi.org/10.1063/1.4751854
4.
4. O. Bierwagen and J. S. Speck, Phys. Stat. Sol. A 211, 48 (2014).
http://dx.doi.org/10.1002/pssa.201330224
5.
5. P. King, T. D. Veal, D. J. Payne, and A. Bourlange, Phys. Rev. Lett. 101, 116808 (2008).
http://dx.doi.org/10.1103/PhysRevLett.101.116808
6.
6. B. Höffling, A. Schleife, C. Rodl, and F. Bechstedt, Phys. Rev. B 85, 035305 (2012).
http://dx.doi.org/10.1103/PhysRevB.85.035305
7.
7. A. Walsh, Appl. Phys. Lett. 98, 261910 (2011).
http://dx.doi.org/10.1063/1.3604811
8.
8. S. Lany, A. Zakutayev, T. O. Mason, J. F. Wager, K. R. Poeppelmeier, J. D. Perkins, J. J. Berry, D. S. Ginley, and A. Zunger, Phys. Rev. Lett. 108, 016802 (2012).
http://dx.doi.org/10.1103/PhysRevLett.108.016802
9.
9. B. J. Coppa, C. C. Fulton, S. M. Kiesel, R. F. Davis, C. Pandarinath, J. E. Burnette, R. J. Nemanich, and D. J. Smith, J. Appl. Phys. 97, 103517 (2005).
http://dx.doi.org/10.1063/1.1898436
10.
10. H. L. Mosbacker, Y. M. Strzhemechny, B. D. White, P. E. Smith, D. C. Look, D. C. Reynolds, C. W. Litton, and L. J. Brillson, Appl. Phys. Lett. 87, 012102 (2005).
http://dx.doi.org/10.1063/1.1984089
11.
11. O. Bierwagen, M. E. White, M.-Y. Tsai, T. Nagata, and J. S. Speck, Appl. Phys. Exp. 2, 106502 (2009).
http://dx.doi.org/10.1143/APEX.2.106502
12.
12. T. Nagata, O. Bierwagen, M. E. White, M.-Y. Tsai, and J. S. Speck, J. Appl. Phys. 107, 033707 (2010).
http://dx.doi.org/10.1063/1.3298467
13.
13. O. Bierwagen, J. S. Speck, T. Nagata, T. Chikyow, Y. Yamashita, H. Yoshikawa, and K. Kobayashi, Appl. Phys. Lett. 98, 172101 (2011).
http://dx.doi.org/10.1063/1.3583446
14.
14. A. Lajn, H. V. Wenckstern, Z. Zhang, C. Czekalla, G. Biehne, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann, S. Wickert, C. Vogt, and R. Denecke, J. Vac. Sci. Technol. B 27, 1769 (2009).
http://dx.doi.org/10.1116/1.3086718
15.
15. H. Frenzel, A. Lajn, H. von Wenckstern, and G. Biehne, Thin Solid Films 518, 1119 (2009).
http://dx.doi.org/10.1016/j.tsf.2009.02.149
16.
16. A. Lajn, H. von Wenckstern, M. Grundmann, G. Wagner, P. Barquinha, E. Fortunato, and R. Martins, J. Appl. Phys. 113, 044511 (2013).
http://dx.doi.org/10.1063/1.4789000
17.
17. J. H. Werner and H. H. Güttler, Phys. Scr. T39, 258 (1991).
http://dx.doi.org/10.1088/0031-8949/1991/T39/039
18.
18. J. H. Werner and H. H. Güttler, J. Appl. Phys. 69, 1522 (1991).
http://dx.doi.org/10.1063/1.347243
19.
19.See supplementary material at http://dx.doi.org/10.1063/1.4870536 for details on current transport by thermionic emission and temperature-dependent IV measurements. [Supplementary Material]
20.
20. W. Moench, J. Appl. Phys. 109, 113724 (2011).
http://dx.doi.org/10.1063/1.3592978
21.
21. S. Matar, G. Campet, and M. Subramanian, Prog. Sol. State Chem. 39, 70 (2011).
http://dx.doi.org/10.1016/j.progsolidstchem.2011.04.002
22.
22. Y. Ohhata, F. Shinoki, and S. Yoshida, Thin Solid Films 59, 255 (1979).
http://dx.doi.org/10.1016/0040-6090(79)90298-0
23.
23. M. W. Allen and S. M. Durbin, Phys. Rev. B 82, 165310 (2010).
http://dx.doi.org/10.1103/PhysRevB.82.165310
24.
24. J. L. Pautrat, B. Katircioglu, N. Magnea, D. Bensahel, J. C. Pfister, and L. Revoil, Solid-State Electron. 23, 1159 (1980).
http://dx.doi.org/10.1016/0038-1101(80)90028-3
25.
25. H. von Wenckstern, M. Brandt, G. Zimmermann, J. Lenzner, H. Hochmuth, M. Lorenz, and M. Grundmann, MRS Proc. 957, 0957K03 (2006).
http://dx.doi.org/10.1557/PROC-0957-K03-02
26.
26. H. von Wenckstern, M. Brandt, H. Schmidt, G. Biehne, R. Pickenhain, H. Hochmuth, M. Lorenz, and M. Grundmann, Appl. Phys. A 88, 135 (2007).
http://dx.doi.org/10.1007/s00339-007-3966-0
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/content/aip/journal/aplmater/2/4/10.1063/1.4870536
2014-04-04
2014-09-16

Abstract

-type binary compound semiconductors such as InN, InAs, or InO are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on InO and discuss temperature-dependent current-voltage characteristics of Pt/InO in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.

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Scitation: Schottky contacts to In2O3
http://aip.metastore.ingenta.com/content/aip/journal/aplmater/2/4/10.1063/1.4870536
10.1063/1.4870536
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