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1. O. Bierwagen and J. S. Speck, Appl. Phys. Lett. 97, 072103 (2010).
2. N. Preissler, O. Bierwagen, A. T. Ramu, and J. S. Speck, Phys. Rev. B 88, 085305 (2013).
3. O. Bierwagen and J. S. Speck, Appl. Phys. Lett. 101, 102107 (2012).
4. O. Bierwagen and J. S. Speck, Phys. Stat. Sol. A 211, 48 (2014).
5. P. King, T. D. Veal, D. J. Payne, and A. Bourlange, Phys. Rev. Lett. 101, 116808 (2008).
6. B. Höffling, A. Schleife, C. Rodl, and F. Bechstedt, Phys. Rev. B 85, 035305 (2012).
7. A. Walsh, Appl. Phys. Lett. 98, 261910 (2011).
8. S. Lany, A. Zakutayev, T. O. Mason, J. F. Wager, K. R. Poeppelmeier, J. D. Perkins, J. J. Berry, D. S. Ginley, and A. Zunger, Phys. Rev. Lett. 108, 016802 (2012).
9. B. J. Coppa, C. C. Fulton, S. M. Kiesel, R. F. Davis, C. Pandarinath, J. E. Burnette, R. J. Nemanich, and D. J. Smith, J. Appl. Phys. 97, 103517 (2005).
10. H. L. Mosbacker, Y. M. Strzhemechny, B. D. White, P. E. Smith, D. C. Look, D. C. Reynolds, C. W. Litton, and L. J. Brillson, Appl. Phys. Lett. 87, 012102 (2005).
11. O. Bierwagen, M. E. White, M.-Y. Tsai, T. Nagata, and J. S. Speck, Appl. Phys. Exp. 2, 106502 (2009).
12. T. Nagata, O. Bierwagen, M. E. White, M.-Y. Tsai, and J. S. Speck, J. Appl. Phys. 107, 033707 (2010).
13. O. Bierwagen, J. S. Speck, T. Nagata, T. Chikyow, Y. Yamashita, H. Yoshikawa, and K. Kobayashi, Appl. Phys. Lett. 98, 172101 (2011).
14. A. Lajn, H. V. Wenckstern, Z. Zhang, C. Czekalla, G. Biehne, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann, S. Wickert, C. Vogt, and R. Denecke, J. Vac. Sci. Technol. B 27, 1769 (2009).
15. H. Frenzel, A. Lajn, H. von Wenckstern, and G. Biehne, Thin Solid Films 518, 1119 (2009).
16. A. Lajn, H. von Wenckstern, M. Grundmann, G. Wagner, P. Barquinha, E. Fortunato, and R. Martins, J. Appl. Phys. 113, 044511 (2013).
17. J. H. Werner and H. H. Güttler, Phys. Scr. T39, 258 (1991).
18. J. H. Werner and H. H. Güttler, J. Appl. Phys. 69, 1522 (1991).
19.See supplementary material at for details on current transport by thermionic emission and temperature-dependent IV measurements. [Supplementary Material]
20. W. Moench, J. Appl. Phys. 109, 113724 (2011).
21. S. Matar, G. Campet, and M. Subramanian, Prog. Sol. State Chem. 39, 70 (2011).
22. Y. Ohhata, F. Shinoki, and S. Yoshida, Thin Solid Films 59, 255 (1979).
23. M. W. Allen and S. M. Durbin, Phys. Rev. B 82, 165310 (2010).
24. J. L. Pautrat, B. Katircioglu, N. Magnea, D. Bensahel, J. C. Pfister, and L. Revoil, Solid-State Electron. 23, 1159 (1980).
25. H. von Wenckstern, M. Brandt, G. Zimmermann, J. Lenzner, H. Hochmuth, M. Lorenz, and M. Grundmann, MRS Proc. 957, 0957K03 (2006).
26. H. von Wenckstern, M. Brandt, H. Schmidt, G. Biehne, R. Pickenhain, H. Hochmuth, M. Lorenz, and M. Grundmann, Appl. Phys. A 88, 135 (2007).

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-type binary compound semiconductors such as InN, InAs, or InO are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on InO and discuss temperature-dependent current-voltage characteristics of Pt/InO in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.


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Scitation: Schottky contacts to In2O3