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We report the effect of PH on the morphology of Au catalyzed Ge nanowires (NWs). Ge NWs were grown on Si (111) substrate at 400 °C in the presence of PH, using vapor-liquid-solid method by chemical vapor deposition. We show that high PH/GeH ratio causes passivation at NW surface. At high PH concentration phosphorous atoms attach itself on NW surface and form a self-protection coating that prevents conformal growth and leads to taper free nanostructures. However, in case of low PH flux the combination of axial and radial growth mechanism occurs resulting in conical structure. We have also investigated axial PH-intrinsic junctions in Ge NWs. The unusual NW shape is attributed to a combination of catalyzed, uncatalyzed and diffusion induced growth.


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