No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3
10. H. J. Kim, U. Kim, T. H. Kim, J. Kim, H. M. Kim, B.-G. Jeon, W.-J. Lee, H. S. Mun, K. T. Hong, J. Yu, K. Char, and K. H. Kim, Phys. Rev. B 86, 165205 (2012).
13. R. J. Cava, B. Batlogg, J. J. Krajewski, R. Farrow, L. W. Rupp Jr., A. E. White, K. Short, W. F. Peck, and T. Kometani, Nature (London) 332, 814 (1988).
19. S. Maekawa, T. Tohyama, S. E. Barnes, S. Ishihara, W. Koshibae, and G. Khaliullin, Physics of Transition Metal Oxides (Springer, Berlin, 2004).
41. H. M. Kim et al., “Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3” (preprint).
Article metrics loading...
We studied the conduction mechanism in Sb-doped BaSnO3 epitaxial films, and compared its behavior with that of the mechanism of its counterpart, La-doped BaSnO3. We found that the electron mobility in BaSnO3 films was reduced by almost 7 times when the dopant was changed from La to Sb, despite little change in the effective mass of the carriers. This indicates that the scattering rate of conduction electrons in the BaSnO3 system is strongly affected by the site at which the dopants are located. More importantly, we found that electron scattering by threading dislocations also depends critically on the dopant site. We propose that the large enhancement of scattering by the threading dislocations in Sb-doped BaSnO3 films is caused by the combination effect of the change in the distribution of Sb impurities in the films, the formation of the Sb impurity clusters near the threading dislocations, and the conduction electron clustering near the Sb impurities.
Full text loading...
Most read this month