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Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism
6. Y. Y. Kee, S. S. Tan, T. K. Yong, C. H. Nee, S. S. Yap, T. Y. Tou, G. Sáfrán, Z. E. Horváth, J. P. Moscatello, and Y. K. Yap, Nanotechnology 23,025706 (2012).
12. G. Meng, T. Yanagida, K. Nagashima, H. Yoshida, M. Kanai, A. Klamchuen, F. Zhuge, Y. He, S. Rahong, X. Fang, S. Takeda, and T. Kawai, J. Am. Chem. Soc. 135,7033 (2013).
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Indium tin oxide nanowires were grown by the reaction of In and Sn with O2 at 800 °C via the vapor-liquid-solid mechanism on 1 nm Au/Si(001). We obtain Sn doped In2O3 nanowires having a cubic bixbyite crystal structure by using In:Sn source weight ratios > 1:9 while below this we observe the emergence of tetragonal rutile SnO2 and suppression of In2O3 permitting compositional and structural tuning from SnO2 to In2O3 which is accompanied by a blue shift of the photoluminescence spectrum and increase in carrier lifetime attributed to a higher crystal quality and Fermi level position.
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