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1. S. Ngamsinlapasathian, T. Sreethawong, Y. Suzuki, and S. Yoshikawa, Sol. Energy Mater. Sol. Cells 90, 2129 (2006).
2. R. Hyam, R. K. Bhosale, W. Lee, S. H. Han, and B. Hannoyer, J. Nanosci. Nanotechnol. 10, 5894 (2010).
3. A. Hichou, M. Addou, M. Mansori, and J. Ebothé, Sol. Energy Mater. Sol. Cells 93, 609 (2009).
4. Q. Wan, P. Feng, and T. H. Wang, Appl. Phys. Lett. 89,123102 (2006).
5. J. Gao, R. Chen, D. H. Li, L. Jiang, J. C. Ye, X. C. Ma, and X. D. Chen, Nanotechnology 22,195706 (2011).
6. Y. Y. Kee, S. S. Tan, T. K. Yong, C. H. Nee, S. S. Yap, T. Y. Tou, G. Sáfrán, Z. E. Horváth, J. P. Moscatello, and Y. K. Yap, Nanotechnology 23,025706 (2012).
7. C. O’Dwyer, M. Szachowicz, G. Visimberga, V. Lavayen, S. B. Newcomb, and C. M. S. Torres, Nat. Nanotechnol. 4, 239 (2009).
8. H. K. Yu, W. J. Dong, G. H. Jung, and J. L. Lee, ACS Nano 5,8026 (2011).
9. N. Horiuchi, Nat. Photonics 5, 332 (2011).
10. M. O. Orlandi, R. Aguiar, A. C. Lanfredi, E. Longo, J. A. Varela, and E. R. Leite, Appl. Phys. A. 80, 23 (2005).
11. P. Nguyen, H. T. Ng, J. Kong, A. M. Cassell, R. Quinn, J. Li, J. Han, and M. Neil, Nano Lett. 3, 925 (2003).
12. G. Meng, T. Yanagida, K. Nagashima, H. Yoshida, M. Kanai, A. Klamchuen, F. Zhuge, Y. He, S. Rahong, X. Fang, S. Takeda, and T. Kawai, J. Am. Chem. Soc. 135,7033 (2013).
13. S. P. Chiu, H. F. Chung, Y. H. Lin, J. J. Kai, F. R. Chen, and J. J. Lin, Nanotechnology 20, 105203 (2009).
14. W. C. Chang, C. H. Kuo, C. C. Juan, P. J. Lee, Y. L. Chueh, and S. J. Lin, Nanoscale Res. Lett. 7, 684 (2012).
15. M. Zervos, A. Othonos, D. Tsokkou, J. Kioseoglou, E. Pavlidou, and Ph. Komninou, Phys. Status Solidi A 210, 226 (2013).
16. G. B. Gonzales, J. B. Cohen, J. H. Hwang, T. O. Mason, J. P. Hodges, and J. D. Jorgensen, J. Appl. Phys. 89, 2550 (2001).
17. G. Neri, A. Bonavita, G. Micali, G. Rizzo, N. Pinna, M. Niderberger, and J. Ba, Thin Solid Films 515, 8637 (2007).
18. G. Frank and H. Kostlin, Appl. Phys. A. 27, 197 (1982).
19. D. Tsokou, M. Zervos, and A. Othonos, J. Appl. Phys. 106, 084307 (2009).

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Indium tin oxide nanowires were grown by the reaction of In and Sn with O at 800 °C via the vapor-liquid-solid mechanism on 1 nm Au/Si(001). We obtain Sn doped InO nanowires having a cubic bixbyite crystal structure by using In:Sn source weight ratios > 1:9 while below this we observe the emergence of tetragonal rutile SnO and suppression of InO permitting compositional and structural tuning from SnO to InO which is accompanied by a blue shift of the photoluminescence spectrum and increase in carrier lifetime attributed to a higher crystal quality and Fermi level position.


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