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/content/aip/journal/aplmater/2/8/10.1063/1.4889843
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/content/aip/journal/aplmater/2/8/10.1063/1.4889843
2014-07-14
2016-12-10

Abstract

This work addresses the effect of energy level alignment between the hole-transporting material and the active layer in vacuum deposited, planar-heterojunction CHNHPbICl perovskite solar cells. Through a series of hole-transport materials, with conductivity values set using controlled p-doping of the layer, we correlate their ionization potentials with the open-circuit voltage of the device. With ionization potentials beyond 5.3 eV, a substantial decrease in both current density and voltage is observed, which highlights the delicate energetic balance between driving force for hole-extraction and maximizing the photovoltage. In contrast, when an optimal ionization potential match is found, the open-circuit voltage can be maximized, leading to power conversion efficiencies of up to 10.9%. These values are obtained with hole-transport materials that differ from the commonly used Spiro-MeO-TAD and correspond to a 40% performance increase this reference.

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