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Enhanced thermoelectric performance of In-substituted GeSb6
with homologous structure
10. Q. Zhang, B. Liao, Y. Lan, K. Lukas, W. Liu, K. Esfarjani, C. Opeil, D. Broido, G. Chen, and Z. Ren, Proc. Natl. Acad. Sci. U.S.A. 110, 13261 (2013).
14. V. Petricek and M. Desek, JANA2000, Institute of Physics, Academy of Sciences of the Czech Republic, Praha, 2000.
See supplementary material at http://dx.doi.org/10.1063/1.4893236
for TG-DTA profile of GeSb6
(Fig. S1), Le Bail fits of 0, 3, 5, and 10 at.% In-substituted GeSb6
at room-temperature (Fig. S2), crystal structure and transport properties of GeInx
= 0, 0.18, 0.3, and 0.6; corresponding to In-0, In-3, In-5, and In-10, respectively) (Table SI), bulk density and relative density of 0, 3, 5, and 10 at.% In-substituted GeSb6
(Table SII), temperature dependence of κ of 0, 3, 5, and 10 at. % In-substituted GeSb6
(In-0, In-3, In-5, and In-10, respectively) (Fig. S3), and low temperature Cp
data and T3
plot of In-0 (Fig. S4). [Supplementary Material]
22. V. I. Fitsul, Heavily Doped Semiconductors (Plenum Press, New York, 1969), p.155.
23. J. Ziman, Electrons and Phonons: The Theory of Transport Phenomena in Solids (Oxford University Press, New York, 2001).
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We studied the crystal structure and thermoelectric properties of polycrystalline GeIn x Sb6−x Te10 (x = 0, 0.18, 0.3, and 0.6). Rietveld and Le Bail analyses showed that all compositions crystallized in trigonal structures with a 51-layer period. Substituting In decreased both the lattice and electronic thermal conductivity, as well as markedly increased the Seebeck coefficient. We ascribed this increase to increases in the effective mass of the carriers, likely caused by the formation of additional energy states near the Fermi level. In GeIn0.6Sb5.4Te10, we found a maximum ZT of 0.75 at 710 K, 1.9 times higher than that of GeSb6Te10.
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