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Band structure mapping of bilayer graphene via quasiparticle scattering
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23.The sample used to produce Fig. 2 had a malfunctioning back gate, prohibiting measurements over the full range of gate voltages. The other sample, with a fully functioning gate, was used instead to produce Figs. 3 and 4.
25.The A and B graphene sublattices each contribute a slightly different phase to the standing wave. These two phases overlap significantly 10 nm and further from the interface, and only show small divergence close to the edge. Since both phases exhibit nearly equivalent overlapping wavelengths, we only plot the phase component from the A-sublattice for clarity.
26.We chose a zigzag edge termination for the trilayer region, but do not find the specific edge termination to significantly affect the wavelength either. Furthermore, we expect the wavelength to be independent of the conditions outside the bilayer edge; only the amplitude decay factor is expected to depend on the exact nature of the neighboring material.
31.There is no simple algebraic expression for the dispersion when including γ4. Therefore, our best-fit is determined by hand. However, the results are quite sensitive to the free fitting parameters γ0 and γ4, therefore they are reasonably precise.
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A perpendicular electric field breaks the layer symmetry of Bernal-stacked bilayer graphene, resulting in the opening of a band gap and a modification of the effective mass of the charge carriers. Using scanning tunneling microscopy and spectroscopy, we examine standing waves in the local density of states of bilayer graphene formed by scattering from a bilayer/trilayer boundary. The quasiparticle interference properties are controlled by the bilayer graphene band structure, allowing a direct local probe of the evolution of the band structure of bilayer graphene as a function of electric field. We extract the Slonczewski-Weiss-McClure model tight binding parameters as γ0 = 3.1 eV, γ1 = 0.39 eV, and γ4 = 0.22 eV.
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