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/content/aip/journal/aplmater/2/9/10.1063/1.4891824
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/content/aip/journal/aplmater/2/9/10.1063/1.4891824
2014-08-05
2016-09-27

Abstract

Stable -doping of WSe using thin films of SiN deposited on the surface via plasma-enhanced chemical vapor deposition is presented. Positive fixed charge centers inside SiN act to dope WSe thin flakes -type via field-induced effect. The electron concentration in WSe can be well controlled up to the degenerate limit by simply adjusting the stoichiometry of the SiN through deposition process parameters. For the high doping limit, the Schottky barrier width at the metal/WSe junction is significantly thinned, allowing for efficient electron injection via tunneling. Using this doping scheme, we demonstrate air-stable WSe n-MOSFETs with a mobility of ∼70 cm2/V s.

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