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1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004).
2. K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, Proc. Natl. Acad. Sci. U.S.A. 102, 10451 (2005).
3. C. R. Dean, A. F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. L. Shepard, and J. Hone, Nat. Nanotechnol. 5, 722 (2010).
4. L. Wang, I. Meric, P. Y. Huang, Q. Gao, Y. Gao, H. Tran, T. Taniguchi, K. Watanabe, L. M. Campos, D. A. Muller, J. Guo, P. Kim, J. Hone, K. L. Shepard, and C. R. Dean, Science 342, 614 (2013).
5. A. K. Geim and I. V. Grigorieva, Nature 499, 419 (2013).
6. L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, A. Mishchenko, T. Georgiou, M. I. Katsnelson, L. Eaves, S. V. Morozov, N. M. R. Peres, J. Leist, A. K. Geim, K. S. Novoselov, and L. A. Ponomarenko, Science 335, 947 (2012).
7. C. R. Dean, L. Wang, P. Maher, C. Forsythe, F. Ghahari, Y. Gao, J. Katoch, M. Ishigami, P. Moon, M. Koshino, T. Taniguchi, K. Watanabe, K. L. Shepard, J. Hone, and P. Kim, Nature 497, 598 (2013).
8. L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. C. Neto, and K. S. Novoselov, Science 340, 1311 (2013).
9. M. S. Choi, G. H. Lee, Y. J. Yu, D. Y. Lee, S. H. Lee, P. Kim, J. Hone, and W. J. Yoo, Nat. Commun. 4, 1624 (2013).
10. C.-H. Lee, T. Schiros, E. J. G. Santos, B. Kim, K. G. Yager, S. J. Kang, S. Lee, J. Yu, K. Watanabe, T. Taniguchi, J. Hone, E. Kaxiras, C. Nuckolls, and P. Kim, Adv. Mater. 26, 2812 (2014).
11. C.-H. Lee, G.-H. Lee, A. M. van der Zande, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Guo, J. Hone, and P. Kim, “Atomically thin p–n junctions with van der Waals heterointerfaces,” Nat. Nanotechnol. (published online).
12. S. J. Haigh, A. Gholinia, R. Jalil, S. Romani, L. Britnell, D. C. Elias, K. S. Novoselov, L. A. Ponomarenko, A. K. Geim, and R. Gorbachev, Nat. Mater. 11, 764 (2012).
13. G.-H. Lee, Y.-J. Yu, X. Cui, N. Petrone, C.-H. Lee, M. S. Choi, D.-Y. Lee, C. Lee, Y. J. Yoo, K. Watanabe, T. Takahashi, C. Nuckolls, P. Kim, and J. Hone, ACS Nano 7, 7931 (2013).
14. S. J. Kang, G.-H. Lee, Y.-J. Yu, Y. Zhao, B. Kim, K. Watanabe, T. Taniguchi, J. Hone, P. Kim, and C. Nuckolls, Adv. Funct. Mater. 24, 5157 (2014).
15. D. J. Late, B. Liu, H. S. S. R. Matte, V. P. Dravid, and C. N. R. Rao, ACS Nano 6, 5635 (2012).
16. S. Tongay, J. Zhou, C. Ataca, J. Liu, J. S. Kang, T. S. Matthews, L. You, J. B. Li, J. C. Grossman, and J. Q. Wu, Nano Lett. 13, 2831 (2013).
17. A. J. Hong, E. B. Song, H. S. Yu, M. J. Allen, J. Kim, J. D. Fowler, J. K. Wassei, Y. Park, Y. Wang, J. Zou, R. B. Kaner, B. H. Weiller, and K. L. Wang, ACS Nano 5, 7812 (2011).
18. P. Cui, S. Seo, J. Lee, L. Wang, E. Lee, M. Min, and H. Lee, ACS Nano 5, 6826 (2011).
19. G. H. Lee, Y. J. Yu, C. Lee, C. Dean, K. L. Shepard, P. Kim, and J. Hone, Appl. Phys. Lett. 99, 243114 (2011).
20. S. Bertolazzi, D. Krasnozhon, and A. Kis, ACS Nano 7, 3246 (2013).
21. Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, Nat. Nanotechnol. 7, 699 (2012).
22. M. Bernardi, M. Palummo, and J. C. Grossman, Nano Lett. 13, 3664 (2013).
23. W. J. Yu, Y. Liu, H. Zhou, A. Yin, Z. Li, Y. Huang, and X. Duan, Nat. Nanotechnol. 8, 952 (2013).
24. M. M. Furchi, A. Pospischil, F. Libisch, J. Burgdröfer, and T. Mueller, Nano Lett. 14, 4785 (2014).
25. Y. Z. Chen, B. Lee, D. N. Fu, and V. Podzorov, Adv. Mater. 23, 5370 (2011).

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The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS heterostructures for memory devices; graphene/MoS/WSe/graphene vertical junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors.


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