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Perovskite-containing solar cells were fabricated in a two-step procedure in which PbI is deposited via spin-coating and subsequently converted to the CHNHPbIperovskite by dipping in a solution of CHNHI. By varying the dipping time from 5 s to 2 h, we observe that the device performance shows an unexpectedly remarkable trend. At dipping times below 15 min the current density and voltage of the device are enhanced from 10.1 mA/cm2 and 933 mV (5 s) to 15.1 mA/cm2 and 1036 mV (15 min). However, upon further conversion, the current density decreases to 9.7 mA/cm2 and 846 mV after 2 h. Based on X-ray diffraction data, we determined that remnant PbI is always present in these devices.Work function and dark current measurements showed that the remnant PbI has a beneficial effect and acts as a blocking layer between the TiO semiconductor and the perovskite itself reducing the probability of back electron transfer (charge recombination). Furthermore, we find that increased dipping time leads to an increase in the size of perovskite crystals at the perovskite-hole-transporting material interface. Overall, approximately 15 min dipping time (∼2% unconverted PbI) is necessary for achieving optimal device efficiency.


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