Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
1. R. Timm, H. Eisele, A. Lenz, S. K. Becker, J. Grabowski, T.-Y. Kim, L. Müller-Kirsch, K. Pötschke, U. W. Pohl, D. Bimberg, and M. Dähne, Appl. Phys. Lett. 85, 5890 (2004).
2. R. Timm, H. Eisele, A. Lenz, L. Ivanova, G. Balakrishnan, D. L. Huffaker, and M. Dähne, Phys. Rev. Lett. 101, 256101 (2008).
3. M. A. Kamarudin, M. Hayne, Q. D. Zhuang, O. Kolosov, T. Nuytten, V. V. Moshchalkov, and F. Dinelli, J. Phys. D: Appl. Phys. 43, 065402 (2010).
4. E. P. Smakman, J. K. Garleff, R. J. Young, M. Hayne, P. Rambabu, and P. M. Koenraad, Appl. Phys. Lett. 100, 142116 (2012).
5. A. J. Martin, J. Hwang, E. A. Marquis, E. Smakman, T. W. Saucer, G. V. Rodriguez, A. H. Hunter, V. Sih, P. M. Koenraad, J. D. Phillips, and J. Millunchick, Appl. Phys. Lett. 102, 113103 (2013).
6. R. Blossey and A. Lorke, Phys. Rev. E 65, 021603 (2002).
7. A. Luque and A. Martí, Phys. Rev. Lett. 78, 5014 (1997).
8. L. Cuadra, A. Martí, and A. Luque, Phys. E 14, 162 (2002).
9. R. B. Laghumavarapu, A. Moscho, A. Khoshakhlagh, M. El-Emawy, L. F. Lester, and D. L. Huffaker, Appl. Phys. Lett. 90, 173125 (2007).
10. A. Marent, M. Geller, and D. Bimberg, Microelectron. J. 40, 492 (2009).
11. A. Marent, T. Nowozin, M. Geller, and D. Bimberg, Semicond. Sci. Tech. 26, 014026 (2011).
12. A. Marent, T. Nowozin, J. Gelze, F. Luckert, and D. Bimberg, Appl. Phys. Lett. 95, 242114 (2009).
13. T. Nowozin, A. Marent, G. Hönig, A. Schliwa, D. Bimberg, A. Beckel, B. Marquardt, A. Lorke, and M. Geller, Phys. Rev. B 84, 075309 (2011).
14. T. Nowozin, L. Bonato, A. Högner, A. Wiengarten, D. Bimberg, W.-H. Lin, S.-Y. Lin, C. J. Reyner, B. L. Liang, and D. L. Huffaker, Appl. Phys. Lett. 102, 052115 (2013).
15. Q. Gong, P. Offermans, R. Nötzel, P. M. Koenraad, and J. H. Wolter, Appl. Phys. Lett. 85, 5697 (2004).
16. P. Offermans, P. M. Koenraad, J. H. Wolter, D. Granados, J. M. García, V. M. Fomin, V. N. Gladilin, and J. T. Devreese, Appl. Phys. Lett. 87, 131902 (2005).
17. S. H. Huang, G. Balakrishnan, A. Khoshakhlagh, A. Jallipalli, L. R. Dawson, and D. L. Huffaker, Appl. Phys. Lett. 88, 131911 (2006).
18. G. Balakrishnan, J. Tatebayashi, A. Khoshakhlagh, S. H. Huang, A. Jallipalli, L. R. Dawson, and D. L. Huffaker, Appl. Phys. Lett. 89, 161104 (2006).
19. A. Mikkelsen, N. Skold, L. Ouattara, M. Borgstrom, J. N. Andersen, L. Samuelson, W. Seifert, and E. Lundgren, Nat. Mater. 3, 519 (2004).
20. F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Y. Meltser, P. S. Kop'ev, and Z. I. Alferov, Appl. Phys. Lett. 67, 656 (1995).
21. D. Alonso-Álvarez, B. Alén, J. M. García, and J. M. Ripalda, Appl. Phys. Lett. 91, 263103 (2007).
22. A. J. Martin, A. H. Hunter, T. W. Saucer, V. Sih, E. A. Marquis, and J. Millunchick, Appl. Phys. Lett. 103, 122102 (2013).
23. S. Lee, H. Ryu, and G. Klimeck, Introduction to Quantum Dot Lab, 2008.

Data & Media loading...


Article metrics loading...



GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.


Full text loading...


Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd