Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/aplmater/3/10/10.1063/1.4932622
1.
1.F. P. Bundy, W. A. Bassett, M. S. Weathers, R. J. Hemley, H. U. Mao, and A. F. Goncharov, “The pressure-temperature phase and transformation diagram for carbon,” Carbon 34, 141153 (1996).
http://dx.doi.org/10.1016/0008-6223(96)00170-4
2.
2.J. Narayan, V. P. Godbole, and C. W. White, “Laser method for synthesis and processing of continuous diamond films on nondiamond substrates,” Science 252, 416418 (1991).
http://dx.doi.org/10.1126/science.252.5004.416
3.
3.J. Narayan, “Fanning the hope for flat diamond,” Science 252, 375 (1991).
http://dx.doi.org/10.1126/science.252.5004.375
4.
4.J. C. Angus and C. C. Hayman, “Low-pressure, metastable growth of diamond and ‘diamondlike’ phases,” Science 241, 913921 (1988).
http://dx.doi.org/10.1126/science.241.4868.913
5.
5.Y. Gogotsi, S. Welz, D. A. Ersoy, and M. J. McNallan, “Conversion of silicon carbide to crystalline diamond-structured carbon at ambient pressure,” Nature 411, 283287 (2001).
http://dx.doi.org/10.1038/35077031
6.
6.R. K. Singh and J. Narayan, “A novel method for simulating laser-solid interactions in semiconductors and layered structures,” Mater. Sci. Eng., B 3, 217230 (1989).
http://dx.doi.org/10.1016/0921-5107(89)90014-7
7.
7.B. G. Bagley and H. S. Chen, “A calculation of the thermodynamic first order amorphous semiconductor to metallic liquid transition temperature,” AIP Conf. Proc. 50, 97101 (1979).
http://dx.doi.org/10.1063/1.31740
8.
8.E. P. Donovan, F. Spaepen, D. Turnbull, J. M. Poate, and D. C. Jacobson, “Heat of crystallization and melting point of amorphous silicon,” Appl. Phys. Lett. 42, 698700 (1983).
http://dx.doi.org/10.1063/1.94077
9.
9.B. R. Appleton and G. K. Celler, Laser and Electron Beam Interaction with Solids, Proceedings of the Materials Research Society Annual Meeting (North Holland Elsevier, 1982), Vol. 4.
10.
10.Laser-Solid Interactions and Transient Thermal Processing of Materials, MRS Proceedings Vol. 13, edited by J. Narayan, W. L. Brown, and R. A. Lemons (North Holland Elsevier, 1983).
11.
11.C. W. White, J. Narayan, and R. T. Young, “Laser annealing of ion-implanted semiconductors,” Science 204, 461468 (1979).
http://dx.doi.org/10.1126/science.204.4392.461
12.
12.J. W. Cahn, S. R. Coriell, and W. J. Boettinger, in Laser and Electron Beam Processing of Materials, edited by C. W. White and P. S. Peercy (Academic Press, 1980), Vol. 89.
13.
13.C. W. White, P. P. Pronko, S. R. Wilson, B. R. Appleton, J. Narayan, and R. T. Young, “Effects of pulsed ruby-laser annealing on As and Sb implanted silicon,” J. Appl. Phys. 50, 32613273 (1979).
http://dx.doi.org/10.1063/1.326366
14.
14.J. Steinbeck, G. Braunstein, M. S. Dresselhaus, T. Venkatesan, and D. C. Jacobson, “A model for pulsed laser melting of graphite,” J. Appl. Phys. 58, 43744382 (1985).
http://dx.doi.org/10.1063/1.335527
15.
15.J. Steinbeck et al., “Segregation of impurities in pulsed-laser-melted carbon,” J. Appl. Phys. 64, 18021809 (1988).
http://dx.doi.org/10.1063/1.341779
16.
16.A. Y. Basharin et al., “Phases formed during rapid quenching of liquid carbon,” Tech. Phys. Lett. 35, 428431 (2009).
http://dx.doi.org/10.1134/S1063785009050137
17.
17.A. Y. Basharin, I. Y. Lysenko, and M. A. Turchaninov, “Carbon alloy formation during graphite pulse laser melting in a medium with pressure of ∼10 MPa,” High Temp. 50, 464470 (2012).
http://dx.doi.org/10.1134/S0018151X12040037
18.
18.J. Narayan and C. W. White, “Pulsed laser melting of amorphous silicon layers,” Appl. Phys. Lett. 44, 3537 (1984).
http://dx.doi.org/10.1063/1.94594
19.
19.J. Narayan, C. W. White, O. W. Holland, and M. J. Aziz, “Phase transformation and impurity redistribution during pulsed laser irradiation of amorphous silicon layers,” J. Appl. Phys. 56, 18211830 (1984).
http://dx.doi.org/10.1063/1.334192
20.
20.R. F. Wood, D. H. Lowndes, and J. Narayan, “Bulk nucleation and amorphous phase formation in highly undercooled molten silicon,” Appl. Phys. Lett. 44, 770772 (1984).
http://dx.doi.org/10.1063/1.94912
21.
21.D. H. Lowndes, R. F. Wood, and J. Narayan, “Pulsed-laser melting of amorphous silicon: Time-resolved measurements and model calculations,” Phys. Rev. Lett. 52, 561564 (1984).
http://dx.doi.org/10.1103/PhysRevLett.52.561
22.
22.L. M. Ghiringhelli et al., “State-of-the-art models for the phase diagram of carbon and diamond nucleation,” Mol. Phys. 106, 20112038 (2008).
http://dx.doi.org/10.1080/00268970802077884
23.
23.B. C. Larson, J. Z. Tischler, and D. M. Mills, “Nanosecond resolution time-resolved x-ray study of silicon during pulsed-laser irradiation,” J. Mater. Res. 1, 144154 (2011).
http://dx.doi.org/10.1557/JMR.1986.0144
24.
24.J. Z. Tischler, B. C. Larson, and D. M. Mills, “Time-resolved x-ray study of Ge during pulsed laser melting,” Appl. Phys. Lett. 52, 17851787 (1988).
http://dx.doi.org/10.1063/1.99625
25.
25.S. L. Johnson et al., “Bonding in liquid carbon studied by time-resolved X-ray absorption spectroscopy,” Phys. Rev. Lett. 94, 057407-1057407-4 (2005).
http://dx.doi.org/10.1103/PhysRevLett.94.057407
26.
26.C. J. Wu, J. N. Glosli, G. Galli, and F. H. Ree, “Liquid-liquid phase transition in elemental carbon: A first-principles investigation,” Phys. Rev. Lett. 89, 135701 (2002).
http://dx.doi.org/10.1103/PhysRevLett.89.135701
http://aip.metastore.ingenta.com/content/aip/journal/aplmater/3/10/10.1063/1.4932622
Loading
/content/aip/journal/aplmater/3/10/10.1063/1.4932622
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/aplmater/3/10/10.1063/1.4932622
2015-10-07
2016-07-24

Abstract

We report on fundamental discovery of conversion of amorphous carbon into diamond by irradiating amorphous carbon films with nanosecond lasers at room-temperature in air at atmospheric pressure. We can create diamond in the form of nanodiamond (size range <100 nm) and microdiamond (>100 nm). Nanosecond laser pulses are used to melt amorphous diamondlike carbon and create a highly undercooled state, from which various forms of diamond can be formed upon cooling. The quenching from the super undercooled state results in nucleation of nanodiamond. It is found that microdiamonds grow out of highly undercooled state of carbon, with nanodiamond acting as seed crystals.

Loading

Full text loading...

/deliver/fulltext/aip/journal/aplmater/3/10/1.4932622.html;jsessionid=NGwCznJqo_Vjci1UaIOWDOUZ.x-aip-live-03?itemId=/content/aip/journal/aplmater/3/10/10.1063/1.4932622&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/aplmater
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=APLMaterials.aip.org/3/10/10.1063/1.4932622&pageURL=http://scitation.aip.org/content/aip/journal/aplmater/3/10/10.1063/1.4932622'
Right1,Right2,Right3,