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/content/aip/journal/aplmater/3/12/10.1063/1.4937894
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/content/aip/journal/aplmater/3/12/10.1063/1.4937894
2015-12-11
2016-12-04

Abstract

Compositional-homogeneity and crystalline-orientation are necessary attributes to achieve high thermoelectric performance in BiSbthin films. Following deposition in vacuum, and upon air exposure, we find that 50%–95% of the Sb in 100-nm thick films segregates to form a nanocrystalline SbOsurface layer, leaving the film bulk as Bi-metal. However, we demonstrate that a thin SiN capping layer deposited prior to air exposure prevents Sb-segregation, preserving a uniform film composition. Furthermore, the capping layer enables annealing in forming gas to improve crystalline orientations along the preferred trigonal axis, beneficially reducing electrical resistivity.

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