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controlled heteroepitaxy of single-domain GaP on As-modified Si(100)
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Metalorganic vapor phase epitaxy of III-V compounds commonly involves arsenic. We study the formation of atomically well-ordered, As-modified Si(100) surfaces and subsequent growth of GaP/Si(100) quasisubstrates in situ with reflection anisotropyspectroscopy.Surface symmetry and chemical composition are measured by low energy electron diffraction and X-ray photoelectron spectroscopy, respectively. A two-step annealing procedure of initially monohydride-terminated, (1 × 2) reconstructed Si(100) in As leads to a predominantly (1 × 2) reconstructedsurface.GaPnucleation succeeds analogously to As-free systems and epilayers free of antiphase disorder may be grown subsequently. The GaP sublattice orientation, however, is inverted with respect to GaPgrowth on monohydride-terminated Si(100).
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