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Selective growth of single phase VO2
(A, B, and M) polymorph thin films
3.Y.-Y. Hu, Z. Liu, K.-W. Nam, O. J. Borkiewicz, J. Cheng, X. Hua, M. T. Dunstan, X. Yu, K. M. Wiaderek, L.-S. Du, K. W. Chapman, P. J. Chupas, X.-Q. Yang, and C. P. Grey, Nat. Mater. 12, 1130 (2013).
12.C. Marini, E. Arcangeletti, D. D. Castro, L. Baldassare, A. Perucchi, S. Lupi, L. Malavasi, L. Boeri, E. Pomjakushina, K. Conder, and P. Postorino, Phys. Rev. B 77, 235111 (2008).
See supplementary material at http://dx.doi.org/10.1063/1.4906880
for X-Ray reciprocal space map and rocking curve using 2D detector for VO2
thin films M, A, and B (Figs. S1 and S2, Table S1); stoichiometry of VO2
(A) and VO2
(B) thin films using oxygen resonance Rutherford backscattering spectra (Fig. S3); dlog(R)/dT versus temperature plot for VO2
polymorphs (Fig. S4).[Supplementary Material]
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We demonstrate the growth of high quality single phase films of VO2(A, B, and M) on SrTiO3 substrate by controlling the vanadium arrival rate (laser frequency) and oxidation of the V atoms. A phase diagram has been developed (oxygen pressure versus laser frequency) for various phases of VO2 and their electronic properties are investigated. VO2(A) phase is insulating VO2(B) phase is semi-metallic, and VO2(M) phase exhibits a metal-insulator transition, corroborated by photo-electron spectroscopic studies. The ability to control the growth of various polymorphs opens up the possibility for novel (hetero)structures promising new device functionalities.
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