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We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO and LaInO. We have developed epitaxial LaInO as the gate oxide on top of BaSnO, which were recently reported to possess high thermal stability and electron mobility when doped with La. We measured the dielectric properties of the epitaxial LaInO films, such as the band gap, dielectric constant, and the dielectric breakdown field. Using the LaInO as a gate dielectric and the La-doped BaSnO as a channel layer, we fabricated field effect device structure. The field effect mobility of such device was higher than 90 cm2 V−1 s−1, the on/off ratio was larger than 107, and the subthreshold swing was 0.65 V dec−1. We discuss the possible origins for such device performance and the future directions for further improvement.


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