No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
All-perovskite transparent high mobility field effect using epitaxial BaSnO3
5.A. D. Caviglia, S. Gariglio, N. Reyren, D. Jaccard, T. Schneider, M. Gabay, S. Thiel, G. Hammerl, J. Mannhart, and J.-M. Triscone, Nature 456, 624-627 (2008).
6.H. J. Kim, U. Kim, H. M. Kim, T. H. Kim, H. S. Mun, B.-G. Jeon, K. T. Hong, W.-J. Lee, C. Ju, K. H. Kim, and K. Char, Appl. Phys. Express 5, 061102 (2012).
7.H. J. Kim, U. Kim, T. H. Kim, J. Kim, H. M. Kim, B.-G. Jeon, W.-J. Lee, H. S. Mun, K. T. Hong, J. Yu, K. Char, and K. H. Kim, Phys. Rev. B 86, 165205 (2012).
11.U. Kim, C. Park, T. Ha, R. Kim, H. S. Mun, H. M. Kim, H. J. Kim, T. H. Kim, N. Kim, J. Yu, K. H. Kim, J. H. Kim, and K. Char, APL Mater. 2, 056107 (2014).
12.S.-G. Lim, S. Kriventsov, T. N. Jackson, J. H. Haeni, D. G. Schlom, M. Balbashov, R. Uecker, P. Reiche, and G. Lucovsky, J. Appl. Phys. 91, 4500 (2002).
14.C.-F. Cao and C.-T. Wu, in Innovative Processing and Synthesis of Ceramics, Glasses, and Composites, edited by J. P. Singhand N. P. Bansal (The American Ceramic Society, Nashville, 2003), Vol. 7.
17.R. F. Pierret, Semiconductor Device Fundamentals (Addison-Wesley, Boston, MA, USA, 1996).
18.R. Jany, C. Richter, C. Woltmann, G. Pfanzelt, B. Förg, M. Rommel, T. Reindl, U. Waizmann, J. Weis, J. A. Mundy, D. A. Muller, H. Boschker, and J. Mannhart, Adv. Mater. Interfaces 1, 1300031 (2013).
19.S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (Wiley, Hoboken, NJ, USA, 2007).
21.K. Shibuya, T. Ohnishi, T. Uozumi, T. Sato, M. Lippmaa, M. Kawasaki, K. Nakajima, T. Chikyow, and H. Koinuma, Appl. Phys. Lett. 88, 212116 (2006).
Article metrics loading...
We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO3 and LaInO3. We have developed epitaxial LaInO3 as the gate oxide on top of BaSnO3, which were recently reported to possess high thermal stability and electron mobility when doped with La. We measured the dielectric properties of the epitaxial LaInO3
films, such as the band gap, dielectric constant, and the dielectric breakdown field. Using the LaInO3 as a gate dielectric and the La-doped BaSnO3 as a channel layer, we fabricated field effect device
structure. The field effect mobility of such device was higher than 90 cm2 V−1 s−1, the on/off ratio was larger than 107, and the subthreshold swing was 0.65 V dec−1. We discuss the possible origins for such device performance and the future directions for further improvement.
Full text loading...
Most read this month