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Research Update: Point defects in CdTex
crystals grown from a Te-rich solution for applications in detecting radiation
1.T. E. Schlesinger, J. E. Toney, H. Yoon, E. Y. Lee, B. A. Brunett, L. Franks, and R. B. James, “Cadmium zinc telluride and its use as a nuclear radiation detector material,” Mater. Sci. Eng. R 32, 103 (2001).
5.R. Gul, R. B. James, K. H. Kim, Z. Li, A. Bolotnikov, R. Rodriguez, K. Keeter, and G. Gu, “Point defects in CdZnTe crystals grown by different techniques,” J. Electron. Mater. 40(3), 274 (2011).
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We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Current Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from 1 to 30 V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.
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