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/content/aip/journal/aplmater/3/4/10.1063/1.4917270
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http://aip.metastore.ingenta.com/content/aip/journal/aplmater/3/4/10.1063/1.4917270
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/content/aip/journal/aplmater/3/4/10.1063/1.4917270
2015-04-15
2016-12-09

Abstract

We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Current Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from 1 to 30 V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.

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