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1.Y.-H. Chu, C.-W. Liang, S.-J. Lin, K.-S. Liu, and I.-N. Lin, Jpn. J. Appl. Phys., Part 1 43, 54095413 (2004).
2.Y. H. Do, W. S. Jung, M. G. Kang, C. Y. Kang, and S. J. Yoon, Sens. Actuators, A 200, 5155 (2013).
3.C. H. Lee, S. J. Kim, Y. Oh, M. Y. Kim, Y.-J. Yoon, and H.-S. Lee, J. Appl. Phys. 108, 102814 (2010).
4.W. Liu, D. Zhan, X. Ma, Z. Song, and S. Feng, J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct. 26, 206208 (2008).
5.S.-W. Yeh, H.-L. Huang, D. Gan, and P. Shen, J. Cryst. Growth 289, 690702 (2006).
6.P. Taylor, W. Ma, and Y. Chen, Ferroelectrics 195, 191194 (1997).
7.V. Depauw, Y. Qiu, K. Van Nieuwenhuysen, I. Gordon, and J. Poortmans, Prog. Photovoltaics: Res. Appl. 19, 844850 (2011).
8.I. Mizushima, T. Sato, S. Taniguchi, and Y. Tsunashima, Appl. Phys. Lett. 77, 32903292 (2000).
9.R. Ma and T. Sasaki, Adv. Mater. 22, 50825104 (2010).
10.T. Shibata, T. Ohnishi, I. Sakaguchi, M. Osada, K. Takada, T. Kogure, and T. Sasaki, J. Phys. Chem. C 113, 1909619101 (2009).
11.T. Shibata, K. Fukuda, Y. Ebina, T. Kogure, and T. Sasaki, Adv. Mater. 20, 231235 (2008).
12.K. Kikuta, K. Noda, S. Okumura, T. Yamaguchi, and S. Hirano, J. Sol-Gel Sci. Technol. 42, 381387 (2007).
13.M. Nijland, S. Kumar, R. Lubbers, D. H. A. Blank, G. Rijnders, G. Koster, and J. E. ten Elshof, ACS Appl. Mater. Interfaces 6, 27772785 (2014).
14.C. Simbrunner, G. Hernandez-Sosa, M. Oehzelt, T. Djuric, I. Salzmann, M. Brinkmann, G. Schwabegger, I. Watzinger, H. Sitter, and R. Resel, Phys. Rev. B 83, 115443 (2011).
15.M. Muramatsu, K. Akatsuka, Y. Ebina, K. Wang, T. Sasaki, T. Ishida, K. Miyake, and M. Haga, Langmuir 21, 65906595 (2005).
16.A. P. Dral, D. Dubbink, M. Nijland, J. E. ten Elshof, G. Rijnders, and G. Koster, J. Vis. Exp. (94), e52209 (2014).
17.See supplementary material at for pictures of a grown and transferred film and for experimental details and results of the transfer procedure with chemical etching of zinc oxide.[Supplementary Material]

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An approach for film transfer is demonstrated that makes use of seed layers of nanosheets on arbitrary sacrificial substrates. Epitaxial SrTiO, SrRuO, and BiFeO films were grown on Ca Nb O nanosheet seed layers on phlogopite mica substrates. Cleavage of the mica substrates enabled film transfer to flexible polyethylene terephthalate substrates. Electron backscatter diffraction, X-ray diffraction, and atomic force microscopy confirmed that crystal orientation and film morphology remained intact during transfer. The generic nature of this approach is illustrated by growing films on zinc oxide substrates with a nanosheet seed layer. Film transfer to a flexible substrate was accomplished via acid etching.


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