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/content/aip/journal/aplmater/3/5/10.1063/1.4921580
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/content/aip/journal/aplmater/3/5/10.1063/1.4921580
2015-05-26
2016-09-27

Abstract

We are reporting the growth of single layer and few-layer MoS films on single crystal sapphire substrates using a pulsed-laser deposition technique. A pulsed KrF excimer laser (wavelength: 248 nm; pulse width: 25 ns) was used to ablate a polycrystalline MoS target. The material thus ablated was deposited on a single crystal sapphire (0001) substrate kept at 700 °C in an ambient vacuum of 10−6 Torr. Detailed characterization of the films was performed using atomic force microscopy (AFM), Raman spectroscopy, UV-Vis spectroscopy, and photoluminescence (PL) measurements. The ablation of the MoS target by 50 laser pulses (energy density: 1.5 J/cm2) was found to result in the formation of a monolayer of MoS as shown by AFM results. In the Raman spectrum, A and E1 peaks were observed at 404.6 cm−1 and 384.5 cm−1 with a spacing of 20.1 cm−1, confirming the monolayer thickness of the film. The UV-Vis absorption spectrum exhibited two exciton absorption bands at 672 nm (1.85 eV) and 615 nm (2.02 eV), with an energy split of 0.17 eV, which is in excellent agreement with the theoretically predicted value of 0.15 eV. The monolayer MoS exhibited a PL peak at 1.85 eV confirming the direct nature of the band-gap. By varying the number of laser pulses, bi-layer, tri-layer, and few-layer MoS films were prepared. It was found that as the number of monolayers (n) in the MoS films increases, the spacing between the A and E1 Raman peaks (Δf) increases following an empirical relation, .

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