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1.Nanoelectronics and Information Technology: Advanced Materials and Novel Devices, 2nd ed., edited by R. Waser (Wiley-VCH, Weinheim, 2005).
2.M. Bibes and A. Barthelemy, IEEE Trans. Electron Devices 54, 1003 (2007).
3.D. G. Schlom, L. Q. Chen, X. Q. Pan, A. Schmehl, and M. A. Zurbuchen, J. Am. Ceram. Soc. 91, 2429 (2008).
4.R. Ramesh and D. G. Schlom, MRS Bull. 33, 1006 (2008).
5.J. Heber, Nature 459, 28 (2009).
6.S. D. Ha and S. Ramanathan, J. Appl. Phys. 110, 071101 (2011).
7.F. Miletto Granozio, G. Koster, and G. Rijnders, MRS Bull. 38, 1017 (2013).
8.H. Akinaga, Jpn. J. Appl. Phys., Part 1 52, 100001 (2013). 100001
9.M. D. Nguyen, H. Nazeer, K. Karakaya, S. V. Pham, R. Steenwelle, M. Dekkers, L. Abelmann, D. H. A. Blank, and G. Rijnders, J. Micromech. Microeng. 20, 085022 (2010).
10.D. Isarakorn, A. Sambri, P. Janphuang, D. Briand, S. Gariglio, J.-M. Triscone, F. Guy, J. W. Reiner, C. H. Ahn, and N. F. de Rooij, J. Micromech. Microeng. 20, 055008 (2010).
11.S. Trolier-McKinstry and P. Muralt, J. Electroceram. 12(1-2), 7 (2004).
12.S. H. Baek, J. Park, D. M. Kim, V. A. Aksyuk, R. R. Das, S. D. Bu, D. A. Felker, J. Lettieri, V. Vaithyanathan, S. S. N. Bharadwaja, N. Bassiri-Gharb, Y. B. Chen, H. P. Sun, C. M. Folkman, H. W. Jang, D. J. Kreft, S. K. Streiffer, R. Ramesh, X. Q. Pan, S. Trolier-McKinstry, D. G. Schlom, M. S. Rzchowski, R. H. Blick, and C. B. Eom, Science 334, 958 (2011).
13.H. Colder, B. Domengès, C. Jorel, P. Marie, M. Boisserie, S. Guillon, L. Nicu, A. Galdi, and L. Méchin, J. Appl. Phys. 115, 053506 (2014).
14.S. Liu, B. Guillet, A. Aryan, C. Adamo, C. Fur, J.-M. Routoure, F. Lemarié, D. G. Schlom, and L. Méchin, Microelectron. Eng. 111, 101 (2013).
15.M. Madou, Fundamentals of Microfabrication and Nanotechnology, 3rd ed. (CRC Press, Boca Raton, 2011).
16.J. Baborowski, J. Electroceram. 12, 33 (2004).
17.J. M. Phillips, J. Appl. Phys. 79, 1829 (1996).
18.K. J. Hubbard and D. G. Schlom, J. Mater. Res. 11, 2757 (1996).
19.S. Stemmer, J. Vac. Sci. Technol. B 22, 791 (2004).
20.J. W. Reiner, A. M. Kolpak, Y. Segal, K. F. Garity, S. Ismail-Beigi, H. Ahn, and F. J. Walker, Adv. Mater. 22, 2919 (2010).
21.F. J. Walker and R. A. McKee, High Dielectric Constant Materials: VLSI MOSFET Applications, edited byH. R. Huff and D. C. Gilmer (Springer, Berlin, 2005), pp. 607637.
22.R. A. McKee and F. J. Walker, U.S. patent 5,830,270 (3 November, 1998).
23.G. Niu, G. Saint-Girons, B. Vilquin, G. Delhaye, J.-L. Maurice, C. Botella, Y. Robach, and G. Hollinger, Appl. Phys. Lett. 95, 062902 (2009).
24.R. A. McKee, F. J. Walker, and M. Chisholm, Phys. Rev. Lett. 81, 3014 (1998).
25.H. Li, X. Hu, Y. Wei, Z. Yu, X. Zhang, R. Droopad, A. A. Demkov, J. Edwards, Jr., K. Moore, W. Ooms, J. Kulik, and P. Fejes, J. Appl. Phys. 93, 4521 (2003).
26.R. A. McKee, F. J. Walker, J. R. Conner, E. D. Specht, and D. E. Zelmon, Appl. Phys. Lett. 59, 782 (1991).
27.V. Vaithyanathan, J. Lettieri, W. Tian, A. Kochhar, H. Ma, A. Sharan, A. Vasudevarao, V. Gopalan, Y. Li, L. Q. Chen, P. Zschack, J. C. Woicik, J. Levy, and D. G. Schlom, J. Appl. Phys. 100, 024108 (2006).
28.D. Halley, G. Norga, A. Guiller, J. Fompeyrine, J. P. Locquet, U. Drechsler, H. Siegwart, and C. Rossel, J. Appl. Phys. 94, 6607 (2003).
29.C. Rossel, B. Mereu, C. Marchiori, D. Caimi, M. Sousa, A. Guiller, H. Siegwart, R. Germann, J. P. Locquet, J. Fompeyrine, D. J. Webb, C. Dieker, and J. W. Seo, Appl. Phys. Lett. 89, 053506 (2006).
30.M. Sousa, C. Rossel, C. Marchiori, H. Siegwart, D. Caimi, J. P. Locquet, D. J. Webb, R. Germann, J. Fompeyrine, K. Babich, J. W. Seo, and C. Dieker, J. Appl. Phys. 102, 104103 (2007).
31.M. P. Warusawithana, C. Cen, C. R. Sleasman, J. C. Woicik, Y. L. Li, L. F. Kourkoutis, J. A. Klug, H. Li, P. Ryan, L. P. Wang, M. Bedzyk, D. A. Muller, L. Q. Chen, J. Levy, and D. G. Schlom, Science 324, 367 (2009).
32.R. Ali and M. Yashima, J. Solid State Chem. 178, 2867 (2005).
33.Z. Trajanovic, C. Kwon, M. C. Robson, K.-C. Kim, M. Rajeswari, R. Ramesh, T. Venkatesan, S. E. Lofland, S. M. Bhagat, and D. Fork, Appl. Phys. Lett. 69, 1005 (1996).
34.I. Bergenti, V. Dediu, E. Arisi, M. Cavallini, F. Biscarini, C. Taliani, M. P. de Jong, C. L. Dennis, J. F. Gregg, M. Solzi, and M. Natali, J. Magn. Magn. Mater. 312, 453 (2007).
35.J.-H. Kim, S. I. Khartsev, and A. M. Grishin, Appl. Phys. Lett. 82, 4295 (2003).
36.L. Méchin, P. Perna, C. Barone, J.-M. Routoure, and Ch. Simon, Mater. Sci. Eng. B 144, 73 (2007).
37.A. K. Pradhan, D. Hunter, T. Williams, B. Lasley-Hunter, R. Bah, H. Mustafa, R. Rakhimov, J. Zhang, D. J. Sellmyer, E. E. Carpenter, D. R. Sahu, and J.-L. Huang, J. Appl. Phys. 103, 023914 (2008).
38.P. Perna, L. Méchin, M. P. Chauvat, P. Ruterana, Ch. Simon, and U. Scotti di Uccio, J. Phys.: Condens. Matter 21, 306005 (2009).
39.L. Méchin, C. Adamo, S. Wu, B. Guillet, S. Lebargy, C. Fur, J.-M. Routoure, S. Mercone, M. Belmeguenai, and D. G. Schlom, Phys. Status Solidi A 209, 1090 (2012).
40.Y. Wei, X. Hu, Y. Liang, D. C. Jordan, B. Craigo, R. Droopad, Z. Yu, A. Demkov, J. L. Edwards, Jr., K. Moore, and W. J. Ooms, Silicon Materials-Processing Characterization and Reliability, edited by J. Veteran, D. L. O’Meara, and V. Misra (Materials Research Society, Warrendale, 2002), Vol. 716, pp. B3.4.1B3.4.6.
41.C. D. Theis and D. G. Schlom, J. Vac. Sci. Technol., A 14, 2677 (1996).
42.L. R. Doolittle, Nucl. Instrum. Methods Phys. Res., Sect. B 9, 344 (1985). 1016/0168-583X(85)90762-1
43.C. Adamo, X. Ke, H. Q. Wang, H. L. Xin, T. Heeg, M. E. Hawley, W. Zander, J. Schubert, P. Schiffer, D. A. Muller, L. Maritato, and D. G. Schlom, Appl. Phys. Lett. 95, 112504 (2009).
44.J. Y. Gu, C. Kwon, M. C. Robson, Z. Trajanovic, K. Ghosh, R. P. Sharma, R. Shreekala, M. Rajeswari, T. Venkatesan, R. Ramesh, and T. W. Noh, Appl. Phys. Lett. 70, 1763 (1997).
45.I.-B. Shim, C.-S. Kim, K.-T. Park, and Y.-J. Oh, J. Magn. Magn. Mater. 226, 1672 (2001).
46.K. Pradhan, S. Mohanty, K. Zhang, J. B. Dadson, E. M. Jackson, D. Hunter, R. R. Rakhimov, and G. B. Loutts, Appl. Phys. Lett. 86, 012503 (2005).
47.D. Hunter, J. B. Dadson, K. Zhang, B. Lasley, K. Lord, S. Mohanty, T. M. Williams, R. R. Rakhimov, A. K. Pradhan, J. Zhang, and D. J. Sellmyer, J. Appl. Phys. 99, 08Q307 (2006).
48.Th. Matthée, J. Wecker, H. Behner, G. Friedl, O. Eibl, and K. Samwer, Appl. Phys. Lett. 61, 1240 (1992).
49.T. Inoue, T. Ohsuna, Y. Obara, Y. Yamamoto, M. Sato, and Y. Sakurai, Jpn. J. Appl. Phys., Part 1 32, 1765 (1993).
50.K. Hirota, N. Kaneko, and Y. Endoh, J. Phys. Soc. Jpn. 65, 3736 (1996).
51.A. Tiwari, A. Chug, C. Jin, D. Kumar, and J. Narayan, Solid State Commun. 121, 679 (2002).
52.Y. S. Cho, J. S. Hwang-Bo, Y. Hee kim, S.-I. Park, S. Won Lee, and C. S. Kim, J. Magn. Magn. Mater. 226, 754 (2001).
53.S. M. Liua, X. B. Zhua, J. Yanga, B. C. Zhaoa, Z. G. Shenga, W. H. Songa, J. M. Daia, and Y. P. Sun, Physica B 353, 238 (2004).
54.D. R. Sahu, D. K. Mishra, J.-L. Huang, and B. K. Roul, Physica B 396, 75 (2007).
55.Y.-M. Kang, A. N. Ulyanov, G.-M. Shin, S.-Y. Lee, D.-G. Yoo, and S.-I. Yoo, J. Appl. Phys. 105, 07D711 (2009).
56.A. Urushibara, Y. Mortomo, T. Arima, A. Asamitsu, G. Kido, and Y. Tokura, Phys. Rev. B 51, 14103 (1995).
57.A. J. Millis, T. Darling, and A. Migliori, J. Appl. Phys. 83, 1588 (1998).
58.L. Méchin, J.-M. Routoure, S. Mercone, F. Yang, S. Flament, and R. A. Chakalov, J. Appl. Phys. 103, 083709 (2008).
59.L. Méchin, S. Wu, B. Guillet, P. Perna, C. Fur, S. Lebargy, C. Adamo, D. G. Schlom, and J. M. Routoure, J. Phys. D: Appl. Phys. 46, 202001 (2013).
60.F. N. Hooge, T. G. M. Kleinpenning, and L. K. J. Vandamme, Rep. Prog. Phys. 44, 481 (1981).
61.F. N. Hooge, Phys. Lett. A 29, 139 (1969).

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We investigate the suitability of an epitaxial CaTiO buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material LaSrMnO with silicon. The magnetic and electrical properties of LaSrMnO films deposited by MBE on CaTiO-buffered silicon (CaTiO/Si) are compared with those deposited on SrTiO-buffered silicon (SrTiO/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/ noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO buffer layer. These results are relevant to device applications of LaSrMnO thin films on silicon substrates.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd