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/content/aip/journal/aplmater/3/6/10.1063/1.4915486
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/content/aip/journal/aplmater/3/6/10.1063/1.4915486
2015-04-24
2016-12-08

Abstract

We investigate the suitability of an epitaxial CaTiO buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material LaSrMnO with silicon. The magnetic and electrical properties of LaSrMnO films deposited by MBE on CaTiO-buffered silicon (CaTiO/Si) are compared with those deposited on SrTiO-buffered silicon (SrTiO/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/ noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO buffer layer. These results are relevant to device applications of LaSrMnO thin films on silicon substrates.

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