Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/aplmater/3/6/10.1063/1.4921068
1.
1.J. Mannhart and D. Schlom, Science 327, 1607 (2010).
http://dx.doi.org/10.1126/science.1181862
2.
2.P. Zubko, S. Gariglio, M. Gabay, P. Ghosez, and J.-M. Triscone, Annu. Rev. Condens. Matter Phys. 2, 141 (2011).
http://dx.doi.org/10.1146/annurev-conmatphys-062910-140445
3.
3.B. Förg, C. Richter, and J. Mannhart, Appl. Phys. Lett. 100, 053506 (2012).
http://dx.doi.org/10.1063/1.3682102
4.
4.C. Cen, S. Thiel, J. Mannhart, and J. Levy, Science 323, 1026 (2009).
http://dx.doi.org/10.1126/science.1168294
5.
5.D. Stornaiuolo, S. Gariglio, N. J. G. Couto, A. Fête, A. D. Caviglia, G. Seyfarth, D. Jaccard, A. F. Morpurgo, and J.-M. Triscone, Appl. Phys. Lett. 101, 222601 (2012).
http://dx.doi.org/10.1063/1.4768936
6.
6.D. Stornaiuolo, S. Gariglio, A. Fête, M. Gabay, D. Li, D. Massarotti, and J.-M. Triscone, Phys. Rev. B 90, 235426 (2014).
http://dx.doi.org/10.1103/PhysRevB.90.235426
7.
7.A. D. Caviglia, S. Gariglio, N. Reyren, D. Jaccard, T. Schneider, M. Gabay, S. Thiel, G. Hammerl, J. Mannhart, and J.-M. Triscone, Nature 456, 624 (2008).
http://dx.doi.org/10.1038/nature07576
8.
8.C. Bell, S. Harashima, Y. Kozuka, M. Kim, B. G. Kim, Y. Hikita, and H. Y. Hwang, Phys. Rev. Lett. 103, 226802 (2009).
http://dx.doi.org/10.1103/PhysRevLett.103.226802
9.
9.A. D. Caviglia, M. Gabay, S. Gariglio, N. Reyren, C. Cancellieri, and J.-M. Triscone, Phys. Rev. Lett. 104, 126803 (2010).
http://dx.doi.org/10.1103/PhysRevLett.104.126803
10.
10.M. Ben Shalom, M. Sachs, D. Rakhmilevitch, A. Palevski, and Y. Dagan, Phys. Rev. Lett. 104, 126802 (2010).
http://dx.doi.org/10.1103/PhysRevLett.104.126802
11.
11.A. Joshua, S. Pecker, J. Ruhman, E. Altman, and S. Ilani, Nat. Commun. 3, 1129 (2012).
http://dx.doi.org/10.1038/ncomms2116
12.
12.D. Rakhmilevitch, I. Neder, M. B. Shalom, A. Tsukernik, M. Karpovski, Y. Dagan, and A. Palevski, Phys. Rev. B 87, 125409 (2013).
http://dx.doi.org/10.1103/PhysRevB.87.125409
13.
13.M. Minohara, Y. Hikita, C. Bell, H. Inoue, M. Hosoda, H. Sato, H. Kumigashira, M. Oshima, E. Ikenaga, and H. Hwang, “The potential profile at the LaAlO3/SrTiO3 (001) heterointerface in operando conditions,” e-print arXiv:1403.5594 (2014).
14.
14.J. Biscaras, S. Hurand, C. Feuillet-Palma, A. Rastogi, R. Budhani, N. Reyren, E. Lesne, J. Lesueur, and N. Bergeal, Sci. Rep. 4, 6788 (2014).
http://dx.doi.org/10.1038/srep06788
15.
15.Z. Popović, S. Satpathy, and R. Martin, Phys. Rev. Lett. 101, 256801 (2008).
http://dx.doi.org/10.1103/PhysRevLett.101.256801
16.
16.M. Salluzzo, J. C. Cezar, N. B. Brookes, V. Bisogni, G. M. De Luca, C. Richter, S. Thiel, J. Mannhart, M. Huijben, A. Brinkman, G. Rijnders, and G. Ghiringhelli, Phys. Rev. Lett. 102, 166804 (2009).
http://dx.doi.org/10.1103/PhysRevLett.102.166804
17.
17.F. Bi, M. Huang, S. Ryu, H. Lee, C.-W. Bark, C.-B. Eom, P. Irvin, and J. Levy, Nat. Commun. 5, 5019 (2014).
http://dx.doi.org/10.1038/ncomms6019
18.
18.M. Hosoda, Y. Hikita, H. Y. Hwang, and C. Bell, Appl. Phys. Lett. 103, 103507 (2013).
http://dx.doi.org/10.1063/1.4820449
19.
19.P. Eerkes, W. van der Wiel, and H. Hilgenkamp, Appl. Phys. Lett. 103, 201603 (2013);
http://dx.doi.org/10.1063/1.4829555
19.P. Eerkes, Ph.D. thesis, University of Twente, 2014, http://dx.doi.org/10.3990/1.9789036536554.
20.
20.V. V. Bal, M. M. Mehta, S. Ryu, H. Lee, C. M. Folkman, C.-B. Eom, and V. Chandrasekhar, “Evidence of Josephson junction behavior in top-gated LaAlO3-SrTiO3,” e-print arXiv:1407.5939 (2014).
21.
21.S. Goswami, E. Mulazimoglu, L. M. Vandersypen, and A. D. Caviglia, Nano Lett. 15, 2627 (2015).
http://dx.doi.org/10.1021/acs.nanolett.5b00216
22.
22.L. Edge, D. Schlom, P. Sivasubramani, R. Wallace, B. Hollander, and J. Schubert, Appl. Phys. Lett. 88, 112907 (2006).
http://dx.doi.org/10.1063/1.2182019
23.
23.C. Cancellieri, N. Reyren, S. Gariglio, A. D. Caviglia, A. Fête, and J.-M. Triscone, Europhys. Lett. 91, 17004 (2010).
http://dx.doi.org/10.1209/0295-5075/91/17004
24.
24. We note that keeping the samples in a vacuum environment after lithography and before Pt sputtering improves the dielectric response of the top-gated heterostructures.
25.
25.M. Stengel and N. A. Spaldin, Nature 443, 679 (2006).
http://dx.doi.org/10.1038/nature05148
26.
26. As shown by Li et al. in reference 38, the top gate capacitance changes when one reaches the strong depletion regime.
27.
27. Data were obtained from different patterns of the same sample.
28.
28.M. Ben Shalom, A. Ron, A. Palevski, and Y. Dagan, Phys. Rev. Lett. 105, 206401 (2010).
http://dx.doi.org/10.1103/PhysRevLett.105.206401
29.
29.A. Fête, S. Gariglio, A. D. Caviglia, J.-M. Triscone, and M. Gabay, Phys. Rev. B 86, 201105 (2012).
http://dx.doi.org/10.1103/PhysRevB.86.201105
30.
30.O. Copie, V. Garcia, C. Bödefeld, C. Carrétéro, M. Bibes, G. Herranz, E. Jacquet, J.-L. Maurice, B. Vinter, S. Fusil, K. Bouzehouane, H. Jaffrès, and A. Barthélémy, Phys. Rev. Lett. 102, 216804 (2009).
http://dx.doi.org/10.1103/PhysRevLett.102.216804
31.
31.G. Khalsa and A. MacDonald, Phys. Rev. B 86, 125121 (2012).
http://dx.doi.org/10.1103/PhysRevB.86.125121
32.
32.S. J. Allen, B. Jalan, S. Lee, D. G. Ouellette, G. Khalsa, J. Jaroszynski, S. Stemmer, and A. H. MacDonald, Phys. Rev. B 88, 045114 (2013).
http://dx.doi.org/10.1103/PhysRevB.88.045114
33.
33.S. Maekawa and H. Fukuyama, J. Phys. Soc. Jpn. 50, 2516 (1981).
http://dx.doi.org/10.1143/JPSJ.50.2516
34.
34.See supplementary material at http://dx.doi.org/10.1063/1.4921068 for magneto-conductance curves for back gate voltage sweeps.[Supplementary Material]
35.
35.Z. Zhong, A. Tóth, and K. Held, Phys. Rev. B 87, 161102 (2013).
http://dx.doi.org/10.1103/PhysRevB.87.161102
36.
36.Y. Kim, R. M. Lutchyn, and C. Nayak, Phys. Rev. B 87, 245121 (2013).
http://dx.doi.org/10.1103/PhysRevB.87.245121
37.
37.G. Khalsa, B. Lee, and A. H. MacDonald, Phys. Rev. B 88, 041302 (2013).
http://dx.doi.org/10.1103/PhysRevB.88.041302
38.
38.L. Li, C. Richter, S. Paetel, T. Kopp, J. Mannhart, and R. Ashoori, Science 332, 825 (2011).
http://dx.doi.org/10.1126/science.1204168
http://aip.metastore.ingenta.com/content/aip/journal/aplmater/3/6/10.1063/1.4921068
Loading
/content/aip/journal/aplmater/3/6/10.1063/1.4921068
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/aplmater/3/6/10.1063/1.4921068
2015-05-13
2016-09-26

Abstract

We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO/SrTiO heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by sweeping top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the back gate strongly modifies the electron mobility while the top gate mainly varies the carrier density. The evolution of the spin-orbit interaction is also followed as a function of top and back gating.

Loading

Full text loading...

/deliver/fulltext/aip/journal/aplmater/3/6/1.4921068.html;jsessionid=cg8ADmGvkkILqed2-l24YL2j.x-aip-live-06?itemId=/content/aip/journal/aplmater/3/6/10.1063/1.4921068&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/aplmater
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=APLMaterials.aip.org/3/6/10.1063/1.4921068&pageURL=http://scitation.aip.org/content/aip/journal/aplmater/3/6/10.1063/1.4921068'
Top,Right1,Right2,Right3,