Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/aplmater/3/6/10.1063/1.4921338
1.
1.T. Wolfram and S. Ellialtioglu, Electronic and Optical Properties of d-Band Perovskites (Cambridge University Press, Cambridge, 2006).
2.
2.C. H. Ahn, A. Bhattacharya, M. Di Ventra, J. N. Eckstein, C. D. Frisbie, M. E. Gershenson, A. M. Goldman, I. H. Inoue, J. Mannhart, A. J. Millis, A. F. Morpurgo, D. Natelson, and J.-M. Triscone, Rev. Mod. Phys. 78, 1185 (2006).
http://dx.doi.org/10.1103/RevModPhys.78.1185
3.
3.C. H. Ahn, J.-M. Triscone, and J. Mannhart, Nature 424, 1015 (2003).
http://dx.doi.org/10.1038/nature01878
4.
4.O. Auciello, J. F. Scott, and R. Ramesh, Phys. Today 51(7), 22 (1998).
http://dx.doi.org/10.1063/1.882324
5.
5.B. N. Mbenkum, N. Ashkenov, M. Schubert, M. Lorenz, H. Hochmuth, D. Michel, M. Grundmann, and G. Wagner, Appl. Phys. Lett. 86, 091904 (2005).
http://dx.doi.org/10.1063/1.1862778
6.
6.G. H. Haertling, J. Am. Ceram. Soc. 82, 797 (1999).
http://dx.doi.org/10.1111/j.1151-2916.1999.tb01840.x
7.
7.K. Dörr, J. Phys. D: Appl. Phys. 39, R125 (2006).
http://dx.doi.org/10.1088/0022-3727/39/7/R01
8.
8.Y. Tokura and Y. Tomioka, J. Magn. Magn. Mater. 200, 1 (1999).
http://dx.doi.org/10.1016/S0304-8853(99)00352-2
9.
9.Y. Tokura, Rep. Prog. Phys. 69, 797 (2006).
http://dx.doi.org/10.1088/0034-4885/69/3/R06
10.
10.T. Kimura, T. Goto, H. Shintani, K. Ishizaka, T. Arima, and Y. Tokura, Nature 426, 55 (2003).
http://dx.doi.org/10.1038/nature02018
11.
11.J. G. Bednorz and K. A. Müller, Z. Phys. B: Condens. Matter 64, 189 (1986).
http://dx.doi.org/10.1007/BF01303701
12.
12.R. J. Cava, J. Am. Ceram. Soc. 83, 5 (2000).
http://dx.doi.org/10.1111/j.1151-2916.2000.tb01142.x
13.
13.J. Son, P. Moetakef, B. Jalan, O. Bierwagen, N. J. Wright, R. Engel-Herbert, and S. Stemmer, Nat. Mater. 9, 482 (2010).
http://dx.doi.org/10.1038/nmat2750
14.
14.A. Ohtomo and H. Y. Hwang, Nature 427, 423 (2004).
http://dx.doi.org/10.1038/nature02308
15.
15.A. J. Smith and A. J. E. Welch, Acta Crystallogr. 13, 653 (1960).
http://dx.doi.org/10.1107/S0365110X60001540
16.
16.X. Luo, Y. S. Oh, A. Sirenko, P. Gao, T. A. Tyson, K. Char, and S.-W. Cheong, Appl. Phys. Lett. 100, 172112 (2012).
http://dx.doi.org/10.1063/1.4709415
17.
17.H. J. Kim, U. Kim, T. H. Kim, J. Kim, H. M. Kim, B.-G. Jeon, W.-J. Lee, H. S. Mun, K. T. Hong, J. Yu, K. Char, and K. H. Kim, Phys. Rev. B 86, 165205 (2012).
http://dx.doi.org/10.1103/PhysRevB.86.165205
18.
18.Y. Shimizu, Y. Fukuyama, T. Narikiyo, H. Arai, and T. Seiyama, Chem. Lett. 14, 377 (1985).
http://dx.doi.org/10.1246/cl.1985.377
19.
19.U. Lampe, J. Gerblinger, and H. Meixner, Sens. Actuators, B 26, 97 (1995).
http://dx.doi.org/10.1016/0925-4005(94)01565-Y
20.
20.U. Lampe, J. Gerblinger, and H. Meixner, Sens. Actuators, B 25, 657 (1995).
http://dx.doi.org/10.1016/0925-4005(95)85145-3
21.
21.P. Singh, D. Kumar, and O. Parkash, J. Appl. Phys. 97, 074103 (2005).
http://dx.doi.org/10.1063/1.1862771
22.
22.T. Huang, T. Nakamura, M. Itoh, Y. Inaguma, and O. Ishiyama, J. Mater. Sci. 30, 1556 (1995).
http://dx.doi.org/10.1007/BF00375264
23.
23.S. Upadhyay, O. Parkash, and D. Kumar, J. Electroceram. 18, 45 (2007).
http://dx.doi.org/10.1007/s10832-007-9007-8
24.
24.K. Balamurugan, N. Harish Kumar, B. Ramachandran, M. S. Ramachandra Rao, J. Arout Chelvane, and P. N. Santhosh, Solid State Commun. 149, 884 (2009).
http://dx.doi.org/10.1016/j.ssc.2009.02.037
25.
25.K. Balamurugan, N. H. Kumar, J. A. Chelvane, and P. N. Santhosh, J. Alloys Compd. 472, 9 (2009).
http://dx.doi.org/10.1016/j.jallcom.2008.04.096
26.
26.Y. Yuan, J. Lv, X. Jiang, Z. Li, T. Yu, Z. Zou, and J. Ye, Appl. Phys. Lett. 91, 094107 (2007).
http://dx.doi.org/10.1063/1.2778631
27.
27.P. H. Borse, U. A. Joshi, S. M. Ji, J. S. Jang, J. S. Lee, E. D. Jeong, and H. G. Kim, Appl. Phys. Lett. 90, 034103 (2007).
http://dx.doi.org/10.1063/1.2430932
28.
28.D. C. Look, D. C. Reynolds, J. R. Sizelove, R. L. Jones, C. W. Litton, G. Cantwell, and W. C. Harsch, Solid State Commun. 105, 399 (1998).
http://dx.doi.org/10.1016/S0038-1098(97)10145-4
29.
29.A. Tsukazaki, A. Ohtomo, and M. Kawasaki, Appl. Phys. Lett. 88, 152106 (2006).
http://dx.doi.org/10.1063/1.2193727
30.
30.T. Kolodiazhnyi, A. Petric, M. Niewczas, C. Bridges, A. Safa-Sefat, and J. E. Greedan, Phys. Rev. B 68, 085205 (2003).
http://dx.doi.org/10.1103/PhysRevB.68.085205
31.
31.K. Ueda, H. Yanagi, H. Hosono, and H. Kawazoe, Phys. Rev. B 56, 12998 (1997).
http://dx.doi.org/10.1103/PhysRevB.56.12998
32.
32.T. Okuda, K. Nakanishi, S. Miyasaka, and Y. Tokura, Phys. Rev. B 63, 113104 (2001).
http://dx.doi.org/10.1103/PhysRevB.63.113104
33.
33.D. J. Singh, D. A. Papaconstantopoulos, J. P. Julien, and F. Cyrot-Lackmann, Phys. Rev. B 44, 9519 (1991).
http://dx.doi.org/10.1103/PhysRevB.44.9519
34.
34.T. N. Stanislavchuk, A. A. Sirenko, A. P. Litvinchuk, X. Luo, and S.-W. Cheong, J. Appl. Phys. 112, 044108 (2012).
http://dx.doi.org/10.1063/1.4748309
35.
35.B. G. Kim, J. Y. Jo, and S. W. Cheong, J. Solid State Chem. 197, 134 (2013).
http://dx.doi.org/10.1016/j.jssc.2012.08.047
36.
36.S. W. Kaun, P. G. Burke, M. H. Wong, E. C. H. Kyle, U. K. Mishra, and J. S. Speck, Appl. Phys. Lett. 101, 262102 (2012).
http://dx.doi.org/10.1063/1.4773510
37.
37.U. Kim, C. Park, T. Ha, Y. M. Kim, N. Kim, C. Ju, J. Park, J. Yu, J. H. Kim, and K. Char, APL Mater. 3, 036101 (2015).
http://dx.doi.org/10.1063/1.4913587
38.
38.X. Fan, W. Zheng, X. Chen, and D. J. Singh, PLoS ONE 9, e91423 (2014).
http://dx.doi.org/10.1371/journal.pone.0091423
39.
39.L. Bjaalie, B. Himmetoglu, L. Weston, A. Janotti, and C. G. V. de Walle, New J. Phys. 16, 025005 (2014).
http://dx.doi.org/10.1088/1367-2630/16/2/025005
40.
40.M. Huijben, G. Rijnders, D. H. A. Blank, S. Bals, S. V. Aert, J. Verbeeck, G. V. Tendeloo, A. Brinkman, and H. Hilgenkamp, Nat. Mater. 5, 556 (2006).
http://dx.doi.org/10.1038/nmat1675
41.
41.N. Nakagawa, H. Y. Hwang, and D. A. Muller, Nat. Mater. 5, 204 (2006).
http://dx.doi.org/10.1038/nmat1569
42.
42.S. Thiel, G. Hammerl, A. Schmehl, C. W. Schneider, and J. Mannhart, Science 313, 1942 (2006).
http://dx.doi.org/10.1126/science.1131091
43.
43.M. S. J. Marshall, A. Malashevich, A. S. Disa, M.-G. Han, H. Chen, Y. Zhu, S. Ismail-Beigi, F. J. Walker, and C. H. Ahn, Phys. Rev. Appl. 2, 051001 (2014).
http://dx.doi.org/10.1103/PhysRevApplied.2.051001
44.
44.M. Boucherit, O. Shoron, C. A. Jackson, T. A. Cain, M. L. C. Buffon, C. Polchinski, S. Stemmer, and S. Rajan, Appl. Phys. Lett. 104, 182904 (2014).
http://dx.doi.org/10.1063/1.4875796
45.
45.Y. Horibe and S.-W. Cheong, (unpublished).
http://aip.metastore.ingenta.com/content/aip/journal/aplmater/3/6/10.1063/1.4921338
Loading
/content/aip/journal/aplmater/3/6/10.1063/1.4921338
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/aplmater/3/6/10.1063/1.4921338
2015-05-19
2016-05-30

Abstract

Semiconductor materials are being used in an increasingly diverse array of applications, with new device concepts being proposed each year for solar cells, flat-panel displays, sensors, memory, and spin transport. This rapid progress of invention outpaces the development of new semiconductor materials with the required properties and performance. In many applications, high carrier mobility at room temperature is required in addition to specific functional properties critical to the device concept. We review recent developments on high mobility stannate perovskite oxide materials and devices.

Loading

Full text loading...

/deliver/fulltext/aip/journal/aplmater/3/6/1.4921338.html;jsessionid=CzH-6XXdDjGJ6fubub8hCBT0.x-aip-live-06?itemId=/content/aip/journal/aplmater/3/6/10.1063/1.4921338&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/aplmater
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=APLMaterials.aip.org/3/6/10.1063/1.4921338&pageURL=http://scitation.aip.org/content/aip/journal/aplmater/3/6/10.1063/1.4921338'
Right1,Right2,Right3,