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/content/aip/journal/aplmater/3/8/10.1063/1.4927796
2015-08-03
2016-09-26

Abstract

Scanning nano-focused X-ray diffraction and high-angle annular dark-field scanning transmission electron microscopy are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped NdCeCuO and superconducting hole-doped LaSrCuO thin films, the latter being the top layer. On the ramp, a new growth mode of LaSrCuO with a 3.3° tilt of the -axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed.

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