Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/aplmater/4/1/10.1063/1.4939181
1.
1.B. Govoreanu, G. S. Kar, Y. Chen, V. Paraschiv, S. Kubicek, A. Fantini, I. P. Radu, L. Goux, S. Clima, R. Degraeve et al., IEEE IEDM 2011 (IEEE, Washington, DC, 2011), pp. 31.6.131.6.4.
2.
2.R. Waser and M. Aono, Nat. Mater. 6, 833 (2007).
http://dx.doi.org/10.1038/nmat2023
3.
3.H.-S. P. Wong, H. Y. Lee, S. Yu, Y. S. Chen, Y. Wu, P. S. Chen, B. Lee, F. T. Chen, and M. J. Tsai, Proc. IEEE 100, 1951 (2012).
http://dx.doi.org/10.1109/jproc.2012.2190369
4.
4.R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 21, 2632 (2009).
http://dx.doi.org/10.1002/adma.200900375
5.
5.D.-H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X.-S. Li, G.-S. Park, B. Lee, S. Han et al., Nat. Nanotechnol. 5, 148 (2010).
http://dx.doi.org/10.1038/nnano 2009.456
6.
6.K. M. Kim, D. S. Jeong, and C. S. Hwang, Nanotechnology 22, 254002 (2011).
http://dx.doi.org/10.1088/0957-4484/22/25/254002
7.
7.D. S. Jeong, H. Schroeder, U. Breuer, and R. Waser, J. Appl. Phys. 104, 123716 (2008).
http://dx.doi.org/10.1063/1.3043879
8.
8.J. J. Yang, F. Miao, M. D. Pickett, D. A. A. Ohlberg, D. R. Stewart, C. N. Lau, and R. S. Williams, Nanotechnology 20, 215201 (2009).
http://dx.doi.org/10.1088/0957-4484/20/21/215201
9.
9.N. Ghenzi, D. Rubi, E. Mangano, G. Gimenez, J. Lell, A. Zelcer, P. Stoliar, and P. Levy, Thin Solid Films 550, 683 (2014).
http://dx.doi.org/10.1016/j.tsf.2013.11.013
10.
10.S. R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968).
http://dx.doi.org/10.1103/PhysRevLett.21.1450
11.
11.A. A. Sharma, M. Noman, M. Abdelmoula, M. Skowronski, and J. A. Bain, Adv. Funct. Mater. 24, 5522 (2014).
http://dx.doi.org/10.1002/adfm.201400461
12.
12.A. S. Alexandrov, A. M. Bratkovsky, B. Bridle, S. E. Savel’ev, D. B. Strukov, and R. S. Williams, Appl. Phys. Lett. 99, 202104 (2011).
http://dx.doi.org/10.1063/1.3660229
13.
13.D. Ielmini, C. Cagli, and F. Nardi, Appl. Phys. Lett. 94, 063511 (2009).
http://dx.doi.org/10.1063/1.3081401
14.
14.V. G. Karpov, Y. A. Kryukov, S. D. Savransky, and I. V. Karpov, Appl. Phys. Lett. 90, 123504 (2007).
http://dx.doi.org/10.1063/1.2715024
15.
15.A. A. Sharma, I. V. Karpov, R. Kotlyar, J. Kwon, M. Skowronski, and J. A. Bain, J. Appl. Phys. 118, 114903 (2015).
http://dx.doi.org/10.1063/1.4930051
16.
16.M. Noman, A. A. Sharma, Y. M. Lu, R. Kamaladasa, M. Skowronski, P. A. Salvador, and J. A. Bain, Appl. Phys. Lett. 104, 113510 (2014).
http://dx.doi.org/10.1063/1.4869230
17.
17.B. K. Ridley, Proc. Phys. Soc. 82, 954 (1963).
http://dx.doi.org/10.1088/0370-1328/82/6/315
18.
18.M. Noman, A. A. Sharma, Y. Meng Lu, M. Skowronski, P. A. Salvador, and J. A. Bain, Appl. Phys. Lett. 102, 023507 (2013).
http://dx.doi.org/10.1063/1.4776693
19.
19.R. Nakamura, T. Toda, S. Tsukui, M. Tane, M. Ishimaru, T. Suzuki, and H. Nakajima, J. Appl. Phys. 116, 033504 (2014).
http://dx.doi.org/10.1063/1.4889800
20.
20.R. Ramprasad, J. Appl. Phys. 95, 954 (2004).
http://dx.doi.org/10.1063/1.1637132
21.
21.S. Larentis, F. Nardi, S. Balatti, D. C. Gilmer, and D. Ielmini, IEEE Trans. Electron Devices 59, 24682475 (2012).
http://dx.doi.org/10.1109/TED.2012.2202320
22.
22.M. Noman, W. Jiang, P. A. Salvador, M. Skowronski, and J. A. Bain, Appl. Phys. A 102, 877 (2011).
http://dx.doi.org/10.1007/s00339-011-6270-y
23.
23.D. Adler, H. K. Henisch, and S. N. Mott, Rev. Mod. Phys. 50, 209 (1978).
http://dx.doi.org/10.1103/RevModPhys.50.209
24.
24.D. Ielmini, Phys. Rev. B 78, 035308 (2008).
http://dx.doi.org/10.1103/PhysRevB.78.035308
25.
25.A. L. Pergament, P. P. Boriskov, A. A. Velichko, and N. A. Kuldin, J. Phys. Chem. Solids 71, 874 (2010).
http://dx.doi.org/10.1016/j.jpcs.2010.03.032
http://aip.metastore.ingenta.com/content/aip/journal/aplmater/4/1/10.1063/1.4939181
Loading
/content/aip/journal/aplmater/4/1/10.1063/1.4939181
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/aplmater/4/1/10.1063/1.4939181
2016-01-04
2016-12-10

Abstract

Transport characteristics of TiN/Ta/TaO/TiN resistive-switching crossbar devices with amorphous TaO functional layer have been investigated at cryogenic temperatures. Quasi-DC - characteristics at 10 K show a negative differential resistance region followed by a rapid transition to the non-volatile formed state. Accounting for Joule heating, the device temperature at the point of switching was estimated at 150 K. Measurements of transient resistance at low stage temperatures revealed an abrupt drop of resistance delayed by a characteristic incubation time after the leading edge of the voltage pulse. The incubation time was a strong function of applied voltage but did not depend on temperature between 10 K and 100 K. This implies a very low activation energy of the threshold switching process at low temperatures. Both of these observations argue against the involvement of oxygen vacancy motion at the onset of the forming process.

Loading

Full text loading...

/deliver/fulltext/aip/journal/aplmater/4/1/1.4939181.html;jsessionid=8M3W0weIRIwQeYYBSjGfVZcM.x-aip-live-02?itemId=/content/aip/journal/aplmater/4/1/10.1063/1.4939181&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/aplmater
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=APLMaterials.aip.org/4/1/10.1063/1.4939181&pageURL=http://scitation.aip.org/content/aip/journal/aplmater/4/1/10.1063/1.4939181'
Top,Right1,Right2,Right3,