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/content/aip/journal/aplmater/4/1/10.1063/1.4939657
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/content/aip/journal/aplmater/4/1/10.1063/1.4939657
2016-01-28
2016-09-26

Abstract

High-mobility perovskite BaSnOfilms are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnOfilms have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy(MBE) approach, which supplies pre-oxidized SnO. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO. We demonstrate room temperature electron mobilities of 150 cm2 V−1 s−1 in filmsgrown on PrScO. The results open up a wide range of opportunities for future electronic devices.

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