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1.
1.M. Kneissl and T. Wernicke, “Optical and structural properties of InGaN light emitters on non- and semipolar GaN,” in III-Nitride Semiconductors and Their Modern Devices, edited by B. Gil (Oxford University Press, 2013).
2.
2.A. E. Romanov, T. J. Baker, S. Nakamura, and J. S. Speck, J. Appl. Phys. 100, 023522 (2006).
http://dx.doi.org/10.1063/1.2218385
3.
3.D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, J. Disp. Technol. 9, 190 (2013).
http://dx.doi.org/10.1109/JDT.2012.2227682
4.
4.Y. Zhao, Q. Yan, C.-Y. Huang, P. Shan Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C.G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, Appl. Phys. Lett. 100, 201108 (2012).
http://dx.doi.org/10.1063/1.4719100
5.
5.M. Adachi, Jpn. J. Appl. Phys., Part 1 53, 100207 (2014).
http://dx.doi.org/10.7567/JJAP.53.100207
6.
6.D. Sizov, R. Bhat, J. Wang, and C.-E. Zah, Appl. Phys. Express 7, 112701 (2014).
http://dx.doi.org/10.7567/APEX.7.112701
7.
7.A. Pourhashemi, R. M. Farrell, D. A. Cohen, J. S. Speck, and S. Nakamura, Appl. Phys. Lett. 106, 111105 (2015).
http://dx.doi.org/10.1063/1.4915324
8.
8.D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. 105, 171106 (2014).
http://dx.doi.org/10.1063/1.4900793
9.
9.A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Galliant, S. Nakamura, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. 109, 103522 (2011).
http://dx.doi.org/10.1063/1.3590141
10.
10.P. S. Hsu, E. C. Young, A. E. Romanov, K. Fujito, S. P. DenBaars, S. Namakura, and J. S. Speck, Appl. Phys. Lett. 99, 081912 (2011).
http://dx.doi.org/10.1063/1.3628459
11.
11.S. Ploch, T. Wernicke, M. Frentrup, M. Pristovsek, M. Weyers, and M. Kneissl, Appl. Phys. Lett. 101, 202102 (2012).
http://dx.doi.org/10.1063/1.4767336
12.
12.E. C. Young, C. S. Gallinat, A. E. Romanov, A. Tyagi, F. Wu, and J. S. Speck, Appl. Phys. Express 3, 111002 (2010).
http://dx.doi.org/10.1143/APEX.3.111002
13.
13.M. T. Hardy, P. S. Hsu, F. Wu, I. L. Koslow, E. C. Young, S. Nakamura, A. E. Romanov, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 100, 202103 (2012).
http://dx.doi.org/10.1063/1.4716465
14.
14.S. Yoshida, T. Yokogawa, Y. Imai, S. Kimura, and O. Sakata, Appl. Phys. Lett. 99, 131909 (2011).
http://dx.doi.org/10.1063/1.3644978
15.
15.P. S. Hsu, M. T. Hardy, E. C. Young, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, Appl. Phys. Lett. 100, 171917 (2012).
http://dx.doi.org/10.1063/1.4707160
16.
16.J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
http://dx.doi.org/10.1016/s0022-0248(74)80055-2
17.
17.M. M. Savin, V. M. Cherov, and A. M. Strokova, Phys. Status Solidi A 35, 747 (1976).
http://dx.doi.org/10.1002/pssa.2210350240
18.
18.D. Holec, Y. Zhang, D. V. S. Rao, M. J. Kappers, C. McAleese, and C. Humphreys, J. Appl. Phys. 104, 123514 (2008).
http://dx.doi.org/10.1063/1.3033553
19.
19.J. A. Floro, D. M. Follstaedt, P. Provencio, S. J. Hearne, and S. R. Lee, J. Appl. Phys. 96, 7087 (2004).
http://dx.doi.org/10.1063/1.1812361
20.
20.I. L. Koslow, M. T. Hardy, P. S. Hsu, F. Wu, A. E. Romanov, E. C. Yong, S. Nakamura, S. P. DenBaars, and J. S. Speck, J. Cryst. Growth 388, 48 (2014).
http://dx.doi.org/10.1016/j.jcrysgro.2013.10.027
21.
21.J. Bai, T. Wang, K. B. Lee, P. J. Parbrook, Q. Wang, and A. G. Cullis, Surf. Sci. 602, 2643 (2008).
http://dx.doi.org/10.1016/j.susc.2008.06.027
22.
22.S. Srinivasan, L. Geng, R. Liu, F. A. Ponce, Y. Narukawa, and S. Tanaka, Appl. Phys. Lett. 83, 5187 (2003).
http://dx.doi.org/10.1063/1.1633029
23.
23.B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. P. Strunk, D. Hanser, and R. F. Davis, MRS Internet J. Nitride Semicond. Res. 3, 39 (1998).
http://dx.doi.org/10.1557/S1092578300001113
24.
24.E. C. Young, F. Wu, A. E. Romanov, D. Haeger, S. Nakamura, S. P. DenBaars, D. A. Cohen, and J. S. Speck, Appl. Phys. Lett. 101, 142109 (2012).
http://dx.doi.org/10.1063/1.4757423
25.
25.E. C. Young, B. P. Yonkee, F. Wu, B. K. Saifaddin, D. A. Cohen, S. P. DenBaars, S. Nakamura, and J. S. Speck, J. Cryst. Growth 425, 389 (2015).
http://dx.doi.org/10.1016/j.jcrysgro.2015.02.081
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/content/aip/journal/aplmater/4/1/10.1063/1.4939907
2016-01-20
2016-12-06

Abstract

We calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown that there is a switch of stress relaxation modes from generation of basal slip originated MDs to PSMDs after the angle between -axis in wurtzite crystal structure and the direction of semipolar growth reaches a particular value, e.g., ∼70° for AlGaN/GaN () semipolar heterostructures. This means that for some semipolar growth orientations of III-nitride heterostructures biaxial relaxation of misfit stress can be realized. The results of modeling are compared to experimental data on the onset of plastic relaxation in AlGaN/GaN heterostructures.

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