No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity
A. F. Ioffe, Semiconductor Thermoelements and Thermoelectric Cooling (Infosearch, London, 1957).
X. Yan, G. Joshi, W. Liu, Y. Lan, H. Wang, S. Lee, J. Simonson, S. Poon, T. Tritt, G. Chen, and Z. Ren, Nano Lett. 11, 556–560 (2011).
X. Yan, W. Liu, H. Wang, S. Chen, J. Shiomi, K. Esfarjani, H. Wang, D. Wang, G. Chen, and Z. Ren, Energy Environ. Sci. 5, 7543 (2012).
USGS, Scientific Investigations Report 2012–5188 (2013).
G. Joshi, R. He, M. Engber, G. Samsonidze, T. Pantha, E. Dahal, K. Dahal, J. Yang, Y. Lan, B. Kozinsky, and Z. Ren, Energy Environ. Sci. 7, 4070–4076 (2014).
R. He et al., “Achieving high power factor and output power density in p-type half-Heuslers Nb1-xTixFeSb” (submitted).
Y. Ono, S. Inayama, H. Adachi, and T. Kajitani, in 25th International Conference on Thermoelectrics, 2006.
L. Huang, R. He, S. Chen, H. Zhang, K. Dahal, H. Zhou, H. Wang, Q. Zhang, and Z. Ren, Mater. Res. Bull. 70, 773–778 (2015).
L. Zhao, H. Wu, S. Hao, C. Wu, X. Zhou, K. Biswas, J. He, T. Hogan, C. Uher, C. Wolverton, V. Dravid, and M. Kanatzidis, Energy Environ. Sci. 6, 3346 (2013).
L. Zhao, G. Tan, S. Hao, J. He, Y. Pei, H. Chi, H. Wang, S. Gong, H. Xu, V. Dravid, C. Uher, G. Snyder, C. Wolverton, and M. Kanatzidis, Science 351, 141–144 (2015).
Article metrics loading...
Here we report the thermoelectric properties of NbCoSn-based n-type half-Heuslers (HHs) that were obtained through arc melting, ball milling, and hot pressing process. With 10% Sb substitution at the Sn site, we obtained enhanced n-type properties with a maximum power factor reaching ∼35 μW cm−1 K−2 and figure of merit (ZT) value ∼0.6 in NbCoSn0.9Sb0.1. The ZT is doubled compared to the previous report. In addition, the specific power cost ($ W−1) is decreased by ∼68% comparing to HfNiSn-based n-type HH because of the elimination of Hf.
Full text loading...
Most read this month