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Epitaxial growth of higher transition-temperature VO2
films on AlN/Si
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43. From Fig. 2(b), for the VO2 (011) and VO2 (220) planes measured at 2θ = 27.8° and 2θ = 55.6°, respectively, the inter-planar distances d011 and d220 were determined from the Brag’s law. Then, lattice parameters of VO2 were calculated using equation of the crystallographic planes spacing dhkl for monoclinic structure, where for dhkl, values of d220 and d011 were used for cVO2 and aVO2, respectively, at β = 122.6°. Analogously, from Fig. 2(b), for the AlN (101) plane at 2θ = 37.89°, the inter-planar spacing d101 was determined. Further, lattice parameter bAlN (bAlN = aAlN) was calculated using equation of the crystallographic planes spacing dhkl for hexagonal structure (at γ = 120.0°), .
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We report the epitaxialgrowth and the mechanism of a higher temperature insulator-to-metal-transition (IMT) of vanadium dioxide (VO2) thin films synthesized on aluminum nitride (AlN)/Si (111) substrates by a pulsed-laser-deposition method; the IMT temperature is TIMT ≈ 350 K. X-ray diffractometer and high resolution transmission electron microscope data show that the epitaxial relationship of VO2 and AlN is VO2 (010) ‖ AlN (0001) with VO2  zone axes, which results in a substrate-induced tensile strain along the in-plane a and c axes of the insulating monoclinic VO2. This strain stabilizes the insulating phase of VO2 and raises TIMT for 10 K higher than TIMT single crystal ≈ 340 K in a bulk VO2single crystal. Near TIMT, a resistance change of about four orders is observed in a thick film of ∼130 nm. The VO2/AlN/Si heterostructures are promising for the development of integrated IMT-Si technology, including thermal switchers, transistors, and other applications.
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