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The investigation of giant magnetic moment in ultrathin Fe3
7.J. M. Iwata-Harms, R. V. Chopdekar, F. J. Wong, B. B. Nelson-Cheeseman, C. A. Jenkins, E. Arenholz, and Y. Suzuki, Appl. Phys. Lett. 106, 012405 (2015).
See supplementary material at http://dx.doi.org/10.1063/1.4944590
for Figure S1 in which we show RHEED patterns for Fe3
films deposited at different substrate temperatures and the substrate patterns recorded before Fe3
films were deposited. In Figure S2, we indicate the XRD patterns for the films with thickness of 20 nm grown at different substrate temperatures. In Figure S3, we show the XPS spectrum of Fe 2p of the 20 nm Fe3
thin films with computer fitted curves deposited at 550 °C and 600 °C. In Figure S4, we show magnetization as a function of temperature for Fe3
films deposited at different substrate temperatures measured in the presence of a 1 kOe field. In Figure S5, we show the in-plane magnetic hysteresis loops of Fe3
films deposited at different substrate temperatures measured at 300 K.[Supplementary Material]
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The magnetic and transport properties of Fe3O4films with a series of thicknesses are investigated. For the films with thickness below 15 nm, the saturation magnetization (Ms) increases and the coercivity decreases with the decrease in films’ thickness. The Ms of 3 nm Fe3O4film is dramatically increased to 1017 emu/cm3. As for films’ thickness more than 15 nm, Ms is tending to be close to the Fe3O4 bulk value. Furthermore, the Verwey transition temperature (Tv) is visible for all the films, but suppressed for 3 nm film. We also find that the ρ of 3 nm film is the highest of all the films. The suppressed Tv and high ρ may be related to the islands morphology in 3 nm film. To study the structure, magnetic, and transport properties of the Fe3O4films, we propose that the giant magnetic moment most likely comes from the spin of Fe ions in the tetrahedron site switching parallel to the Fe ions in the octahedron site at the surface, interface, and grain boundaries. The above results are of great significance and also provide a promising future for either device applications or fundamental research.
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