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1.
1.E. J. W. Verwey, Nature 144, 327 (1939).
http://dx.doi.org/10.1038/144327b0
2.
2.E. J. Verwey, P. W. Haayman, and F. C. Romeijn, J. Chem. Phys. 15, 181 (1947).
http://dx.doi.org/10.1063/1.1746466
3.
3.S. F. Alvarado, W. Eib, F. Meier, D. T. Pierce, K. Sattler, H. C. Siegmann, and J. P. Remeika, Phys. Rev. Lett. 34, 319 (1975).
http://dx.doi.org/10.1103/PhysRevLett.34.319
4.
4.P. Piekarz, K. Parlinski, and A. M. Oleś, Phys. Rev. Lett. 97, 156402 (2006).
http://dx.doi.org/10.1103/PhysRevLett.97.156402
5.
5.G. K. Rozenberg, M. P. Pasternak, W. M. Xu, Y. Amiel, M. Hanfland, M. Amboage, and R. Jeanloz, Phys. Rev. Lett. 96, 045705 (2006).
http://dx.doi.org/10.1103/PhysRevLett.96.045705
6.
6.J. S. Moodera, L. R. Kinder, T. M. Wong, and R. Meservey, Phys. Rev. Lett. 74, 3273 (1995).
http://dx.doi.org/10.1103/PhysRevLett.74.3273
7.
7.J. M. Iwata-Harms, R. V. Chopdekar, F. J. Wong, B. B. Nelson-Cheeseman, C. A. Jenkins, E. Arenholz, and Y. Suzuki, Appl. Phys. Lett. 106, 012405 (2015).
http://dx.doi.org/10.1063/1.4905533
8.
8.W. G. Wang, M. Li, S. Hageman, and C. L. Chien, Nat. Mater. 11, 64 (2012).
http://dx.doi.org/10.1038/nmat3171
9.
9.G. Hu and Y. Suzuki, Phys. Rev. Lett. 89, 276601 (2002).
http://dx.doi.org/10.1103/PhysRevLett.89.276601
10.
10.L. B. Zhao, W. B. Mi, E. Y. Jiang, and H. L. Bai, Appl. Phys. Lett. 91, 052113 (2007).
http://dx.doi.org/10.1063/1.2766845
11.
11.D. T. Margulies, F. T. Parker, F. E. Spada, R. S. Goldman, J. Li, R. Sinclair, and A. E. Berkowitz, Phys. Rev. B 53, 9175 (1996).
http://dx.doi.org/10.1103/PhysRevB.53.9175
12.
12.D. T. Margulies, F. T. Parker, M. L. Rudee, F. E. Spada, J. N. Chapman, P. R. Aitchison, and A. E. Berkowitz, Phys. Rev. Lett. 79, 5162 (1997).
http://dx.doi.org/10.1103/PhysRevLett.79.5162
13.
13.W. Eerenstein, T. Hibma, and S. Celotto, Phys. Rev. B 70, 184404 (2004).
http://dx.doi.org/10.1103/PhysRevB.70.184404
14.
14.K. P. McKenna, F. Hofer, D. Gilks, V. K. Lazarov, C. Chen, Z. Wang, and Y. Ikuhara, Nat. Comm. 5, 5740 (2014).
http://dx.doi.org/10.1038/ncomms6740
15.
15.W. Eerenstein, T. T. M. Palstra, S. S. Saxena, and T. Hibma, Phys. Rev. Lett. 88, 247204 (2002).
http://dx.doi.org/10.1103/PhysRevLett.88.247204
16.
16.X. Liu, H. Lu, M. He, L. Wang, H. Shi, K. Jin, and G. Yang, J. Phys. D: Appl. Phys. 47, 105004 (2014).
http://dx.doi.org/10.1088/0022-3727/47/10/105004
17.
17.S. K. Arora, H. C. Wu, H. Yao, W. Y. Ching, R. J. Choudhary, I. V. Shvets, and O. N. Mryasov, IEEE Trans. Magn. 44, 2628 (2008).
http://dx.doi.org/10.1109/TMAG.2008.2003173
18.
18.S. K. Arora, H. C. Wu, R. J. Choudhary, I. V. Shvets, O. N. Mryasov, H. Yao, and W. Y. Ching, Phys. Rev. B 77, 134443 (2008).
http://dx.doi.org/10.1103/physrevb.77.134443
19.
19.J. Orna, P. A. Algarabel, L. Morellón, J. A. Pardo, J. M. de Teresa, R. L. Antón, and A. Wildes, Phys. Rev. B 81, 144420 (2010).
http://dx.doi.org/10.1103/PhysRevB.81.144420
20.
20.U. Lüders, A. Barthélémy, M. Bibes, K. Bouzehouane, S. Fusil, E. Jacquet, and A. Fert, Adv. Mater. 18, 1733 (2006).
http://dx.doi.org/10.1002/adma.200500972
21.
21.See supplementary material at http://dx.doi.org/10.1063/1.4944590 for Figure S1 in which we show RHEED patterns for Fe3O4films deposited at different substrate temperatures and the substrate patterns recorded before Fe3O4films were deposited. In Figure S2, we indicate the XRD patterns for the films with thickness of 20 nm grown at different substrate temperatures. In Figure S3, we show the XPS spectrum of Fe 2p of the 20 nm Fe3O4thin films with computer fitted curves deposited at 550 °C and 600 °C. In Figure S4, we show magnetization as a function of temperature for Fe3O4films deposited at different substrate temperatures measured in the presence of a 1 kOe field. In Figure S5, we show the in-plane magnetic hysteresis loops of Fe3O4 films deposited at different substrate temperatures measured at 300 K.[Supplementary Material]
22.
22.A. Hamie, Y. Dumont, E. Popova, A. Fouchet, F. B. Warot, C. Gatel, and N. Keller, Thin Solid Films 525, 115 (2012).
http://dx.doi.org/10.1016/j.tsf.2012.10.076
23.
23.Y. Z. Chen, J. R. Sun, Y. N. Han, X. Y. Xie, J. Shen, C. B. Rong, and B. G. Shen, J. Appl. Phys. 103, 07D703 (2008).
http://dx.doi.org/10.1063/1.2832305
24.
24.J. D. Wei, I. Knittel, U. Hartmann, Y. Zhou, S. Murphy, I. V. Shvets, and F. T. Parker, Appl. Phys. Lett. 89, 122517 (2006).
http://dx.doi.org/10.1063/1.2356308
25.
25.Z. Huang, Q. Chen, Y. Zhai, J. Wang, Y. Xu, and B. Wang, Appl. Phys. Lett. 106, 182401 (2015).
http://dx.doi.org/10.1063/1.4919862
26.
26.P. Sheng, B. Abeles, and Y. Arie, Phys. Rev. Lett. 31, 44 (1973).
http://dx.doi.org/10.1103/PhysRevLett.31.44
27.
27.H. Liu, E. Y. Jiang, H. L. Bai, R. K. Zheng, and X. X. Zhang, J. Phys. D: Appl. Phys. 36, 2950 (2003).
http://dx.doi.org/10.1088/0022-3727/36/23/013
28.
28.H. Liu, E. Y. Jiang, H. L. Bai, R. K. Zheng, H. L. Wei, and X. X. Zhang, Appl. Phys. Lett. 83, 3531 (2003).
http://dx.doi.org/10.1063/1.1622440
29.
29.P. Sheng, Phys. Rev. B 21, 2180 (1980).
http://dx.doi.org/10.1103/PhysRevB.21.2180
30.
30.W. B. Mi, J. J. Shen, E. Y. Jiang, and H. L. Bai, Acta Mater. 55, 1919 (2007).
http://dx.doi.org/10.1016/j.actamat.2006.10.050
31.
31.J. J. Shen, W. B. Mi, Z. Q. Li, P. Wu, E. Y. Jiang, and H. L. Bai, J. Vac. Sci. Technol., A 24, 390 (2006).
http://dx.doi.org/10.1116/1.2183226
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/content/aip/journal/aplmater/4/3/10.1063/1.4944590
2016-03-22
2016-12-08

Abstract

The magnetic and transport properties of FeOfilms with a series of thicknesses are investigated. For the films with thickness below 15 nm, the saturation magnetization (M) increases and the coercivity decreases with the decrease in films’ thickness. The M of 3 nm FeOfilm is dramatically increased to 1017 emu/cm3. As for films’ thickness more than 15 nm, M is tending to be close to the FeO bulk value. Furthermore, the Verwey transition temperature (T) is visible for all the films, but suppressed for 3 nm film. We also find that the ρ of 3 nm film is the highest of all the films. The suppressed T and high ρ may be related to the islands morphology in 3 nm film. To study the structure, magnetic, and transport properties of the FeOfilms, we propose that the giant magnetic moment most likely comes from the spin of Fe ions in the tetrahedron site switching parallel to the Fe ions in the octahedron site at the surface, interface, and grain boundaries. The above results are of great significance and also provide a promising future for either device applications or fundamental research.

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