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/content/aip/journal/aplmater/4/4/10.1063/1.4947142
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/content/aip/journal/aplmater/4/4/10.1063/1.4947142
2016-04-20
2016-12-07

Abstract

In this paper, intrinsic and extrinsic factors dependent switching process in P(VDF-TrFE) thin films is investigated through time domain polarization measurements. The thinning-induced increase of switching time is observed for samples below 80 nm due to the surface oxide layer. For thinner samples the switchable polarization decreases with decreasing temperature since domain pinning prevails. Switching is faster using metalelectrode with higher work function, which can be attributed to the lower depolarization field. Furthermore, the switching time increases with increasing the waiting time and increasing the pulse width of the prepolarization pulse caused by imprint effect.

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