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/content/aip/journal/aplmater/4/5/10.1063/1.4950826
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/content/aip/journal/aplmater/4/5/10.1063/1.4950826
2016-05-17
2016-09-26

Abstract

The influence of growth temperature on the surface morphology and luminescence properties of Eu-doped GaN layers grown by organometallic vapor phase epitaxy was investigated. By using a Eu source that does not contain oxygen in its molecular structure, and varying the growth temperature, the local defect environment around the Eu3+ ions was manipulated, yielding a higher emission intensity from the Eu3+ ions and a smoother sample surface. The optimal growth temperature was determined to be 960 °C and was used to fabricate a GaN-based red light-emitting diode with a significantly higher output power.

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