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Realization of high quality epitaxial current- perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layer
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In this letter, we report a NiAl buffer layer as a template for the integration of epitaxial current-perpendicular-plane-giant magnetoresistive (CPP-GMR)
devices on a Si(001) single crystalline substrate. By depositing NiAl on a Si wafer at an elevated temperature of 500 °C, a smooth and epitaxial
B2-type NiAl(001) layer was obtained. The surface roughness was further improved by depositing Ag on the NiAl layer and applying subsequent annealing process. The epitaxial
grown on the buffered Si(001) substrate present a large magnetoresistive output comparable with that of the devices
grown on an MgO(001) substrate, demonstrating the possibility of epitaxial
spintronic devices with a NiAl templated Si wafer for practical applications.
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