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/content/aip/journal/aplmater/4/5/10.1063/1.4952609
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/content/aip/journal/aplmater/4/5/10.1063/1.4952609
2016-05-25
2016-09-28

Abstract

We report p-doping of the BaSnO (BSO) by replacing Ba with K. The activation energy of K-dopants is estimated to be about 0.5 eV. We have fabricated pn junctions by using K-doped BSO as a p-type and La-doped BSO as an n-type semiconductor. I-V characteristics of these devices exhibit an ideal rectifying behavior of pn junctions with the ideality factor between 1 and 2, implying high integrity of the BSO materials. Moreover, the junction properties are found to be very stable after repeated high-bias and high-temperature thermal cycling, demonstrating a large potential for optoelectronic functions.

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