Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
F. A. Zwanenburg, A. S. Dzurak, A. Morello, M. Y. Simmons, L. C. L. Hollenberg, G. Klimeck, S. Rogge, S. N. Coppersmith, and M. A. Eriksson, Rev. Mod. Phys. 85, 961 (2013).
L. R. Schreiber and H. Bluhm, Nat. Nanotechnol. 9, 966 (2014).
B. M. Maune, M. G. Borselli, B. Huang, T. D. Ladd, P. W. Deelman, K. S. Holabird, A. A. Kiselev, I. Alvarado-Rodriguez, R. S. Ross, A. E. Schmitz, M. Sokolich, C. A. Watson, M. F. Gyure, and A. T. Hunter, Nature 481, 344 (2012).
E. Kawakami, P. Scarlino, D. R. Ward, F. R. Braakman, D. E. Savage, M. G. Lagally, M. Friesen, S. N. Coppersmith, M. A. Eriksson, and L. M. K. Vandersypen, Nat. Nanotechnol. 9, 666 (2014).
D. Kim, Z. Shi, C. B. Simmons, D. R. Ward, J. R. Prance, T. S. Koh, J. K. Gamble, D. E. Savage, M. G. Lagally, M. Friesen, S. N. Coppersmith, and M. A. Eriksson, Nature 511, 70 (2014).
K. Eng, T. D. Ladd, A. Smith, M. G. Borselli, A. A. Kiselev, B. H. Fong, K. S. Holabird, T. M. Hazard, B. Huang, P. W. Deelman, I. Milosavljevic, A. E. Schmitz, R. S. Ross, M. F. Gyure, and A. T. Hunter, Sci. Adv. 1, e1400254 (2015).
J. J. Morton, D. R. McCamey, M. A. Eriksson, and S. A. Lyon, Nature 479, 345 (2011).
M. Friesen, M. A. Eriksson, and S. N. Coppersmith, Appl. Phys. Lett. 89, 202106 (2006).
D. Kamburov, H. Shapourian, M. Shayegan, L. N. Pfeiffer, K. W. West, K. W. Baldwin, and R. Winkler, Phys. Rev. B 85, 121305 (2012).
R. L. Willett, J. W. P. Hsu, D. Natelson, K. W. West, and L. N. Pfeiffer, Phys. Rev. Lett. 87, 126803 (2001).
B. Novakovic, R. Akis, and I. Knezevic, Phys. Rev. B 84, 195419 (2011).
K. Haruta and W. J. Spencer, J. Appl. Phys. 37, 2232 (1966).
G. Guisbiers, O. V. Overschelde, M. Wautelet, P. Leclère, and R. Lazzaroni, J. Phys. D: Appl. Phys. 40, 1077 (2007).
M. V. Fischetti, Z. Ren, P. M. Solomon, M. Yang, and K. Rim, J. Appl. Phys. 94, 1079 (2003).
P. G. Evans, D. E. Savage, J. R. Prance, C. B. Simmons, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson, and T. U. Schulli, Adv. Mater. 24, 5217 (2012).
M. A. Lutz, R. M. Feenstra, F. K. LeGoues, P. M. Mooney, and J. O. Chu, Appl. Phys. Lett. 66, 724 (1995).
P. M. Mooney, J. L. Jordan-Sweet, and S. H. Christiansen, Appl. Phys. Lett. 79, 2363 (2001).
D. M. Paskiewicz, D. E. Savage, M. V. Holt, P. G. Evans, and M. G. Lagally, Sci. Rep. 4, 4218 (2014).
I. C. Noyan, P. C. Wang, S. K. Kaldor, and J. L. Jordan-Sweet, Appl. Phys. Lett. 74, 2352 (1999).
C. E. Murray, I. C. Noyan, P. M. Mooney, B. Lai, and Z. Cai, Appl. Phys. Lett. 83, 4163 (2003).
P. G. Evans, P. P. Rugheimer, M. G. Lagally, C. H. Lee, A. Lal, Y. Xiao, B. Lai, and Z. Cai, J. Appl. Phys. 97(10), 103501 (2005).
C. E. Murray, A. Ying, S. M. Polvino, I. C. Noyan, M. Holt, and J. Maser, J. Appl. Phys. 109, 083543 (2011).
M. V. Holt, S. O. Hruszkewycz, C. E. Murray, J. R. Holt, D. M. Paskiewicz, and P. H. Fuoss, Phys. Rev. Lett. 112, 165502 (2014).
S. O. Hruszkewycz, M. V. Holt, C. E. Murray, J. Bruley, J. Holt, A. Tripathi, O. G. Shpyrko, I. McNulty, M. J. Highland, and P. H. Fuoss, Nano Lett. 12, 5148 (2012).
N. Hrauda, J. Zhang, E. Wintersberger, T. Etzelstorfer, B. Mandl, J. Stangl, D. Carbone, V. Holy, V. Jovanovic, C. Biasotto, L. K. Nanver, J. Moers, D. Grutzmacher, and G. Bauer, Nano Lett. 11, 2875 (2011).
L. K. Nanver, V. Jovanović, C. Biasotto, J. Moers, D. Grützmacher, J. J. Zhang, N. Hrauda, M. Stoffel, F. Pezzoli, O. G. Schmidt, L. Miglio, H. Kosina, A. Marzegalli, G. Vastola, G. Mussler, J. Stangl, G. Bauer, J. van der Cingel, and E. Bonera, Solid State Electron. 60, 75 (2011).
M. Hytch, F. Houdellier, F. Hue, and E. Snoeck, Nature 453, 1086 (2008).
K. Sawano, S. Koh, Y. Shiraki, N. Usami, and K. Nakagawa, Appl. Phys. Lett. 83, 4339 (2003).
A. Ying, B. Osting, I. C. Noyan, C. E. Murray, M. Holt, and J. Maser, J. Appl. Cryst. 43, 587 (2010).
See supplementary material at for description of imaging artifacts, and detailed analysis of the angular tilt and Fourier transform of diffraction patterns.[Supplementary Material]
G. A. Chahine, M.-I. Richard, R. A. Homs-Regojo, T. N. Tran-Caliste, D. Carbone, V. L. R. Jacques, R. Grifone, P. Boesecke, J. Katzer, I. Costina, H. Djazouli, T. Schroeder, and T. U. Schülli, J. Appl. Cryst. 47, 762 (2014).
I. A. Blech, J. Appl. Phys. 38, 2913 (1967).
J. A. Floro, S. J. Hearne, J. A. Hunter, P. Kotula, E. Chason, S. C. Seel, and C. V. Thompson, J. Appl. Phys. 89, 4886 (2001).
E. Chason, B. W. Sheldon, L. B. Freund, J. A. Floro, and S. J. Hearne, Phys. Rev. Lett. 88, 156103 (2002).
T. Thorbeck and N. M. Zimmerman, AIP Adv. 5, 087107 (2015).
F. Schaffler, Semicond. Sci. Technol. 12, 1515 (1997).
H. Huebl, A. R. Stegner, M. Stutzmann, M. S. Brandt, G. Vogg, F. Bensch, E. Rauls, and U. Gerstmann, Phys. Rev. Lett. 97, 166402 (2006).
J. J. Pla, K. Y. Tan, J. P. Dehollain, W. H. Lim, J. J. Morton, D. N. Jamieson, A. S. Dzurak, and A. Morello, Nature 489, 541 (2012).
J. T. Muhonen, J. P. Dehollain, A. Laucht, F. E. Hudson, R. Kalra, T. Sekiguchi, K. M. Itoh, D. N. Jamieson, J. C. McCallum, A. S. Dzurak, and A. Morello, Nat. Nanotechnol. 9, 986 (2014).
T. A. Baart, M. Shafiei, T. Fujita, C. Reichl, W. Wegscheider, and L. M. K. Vandersypen, Nat. Nanotechnol. 11, 330 (2016).
J. H. Davies and I. A. Larkin, Phys. Rev. B 49, 4800 (1994).

Data & Media loading...


Article metrics loading...



Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.


Full text loading...


Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd