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/content/aip/journal/aplmater/4/7/10.1063/1.4955213
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/content/aip/journal/aplmater/4/7/10.1063/1.4955213
2016-07-05
2016-09-26

Abstract

A series of anti-perovskites including SrPbO are recently predicted to be a three-dimensional Dirac material with a small mass gap, which may be a topological crystalline insulator. Here, we report the epitaxial growth of SrPbO thin films on LaAlO using molecular beam epitaxy. X-ray diffraction indicates (001) growth of SrPbO, where [110] of SrPbO matches [100] of LaAlO. Measurements of the SrPbO films with parylene/Al capping layers reveal a metallic conduction with -type carrier density of ∼1020 cm−3. The successful growth of high quality SrPbO film is an important step for the exploration of its unique topological properties.

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