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High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering
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We have grown Mg-doped GaN
films with low residual hydrogen concentration using a low-temperature pulsed sputtering
(PSD) process. The growth system is inherently hydrogen-free, allowing us to obtain high-purity Mg-doped GaN
films with residual hydrogen concentrations below 5 × 1016 cm−3, which is the detection limit of secondary ion mass spectroscopy. In the Mg profile, no memory effect or serious dopant diffusion was detected. The as-deposited Mg-doped GaN
films showed clear p-type conductivity at room temperature (RT) without thermal activation. The GaN
doped with a low concentration of Mg (7.9 × 1017 cm−3) deposited by PSD showed hole mobilities of 34 and 62 cm2 V−1 s−1 at RT and 175 K, respectively, which are as high as those of films
grown by a state-of-the-art metal-organic chemical vapor deposition apparatus. These results indicate that PSD is a powerful tool for the fabrication of GaN-based vertical power devices.
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