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Y. Saitoh, K. Sumiyoshi, M. Okada, T. Horii, T. Miyazaki, H. Shiomi, M. Ueno, K. Katayama, M. Kiyama, and T. Nakamura, Appl. Phys. Express 3, 081001 (2010).
Y. Cao, R. Chu, R. Li, M. Chen, R. Chang, and B. Hughes, Appl. Phys. Lett. 108, 062103 (2016).
Z. Hu, K. Nomoto, B. Song, M. Zhu, M. Qi, M. Pan, X. Gao, V. Protasenko, D. Jena, and H. G. Xing, Appl. Phys. Lett. 107, 243501 (2015).
I. C. Kizilyalli, A. P. Edwards, O. Aktas, T. Prunty, and D. Bour, IEEE Trans. Electron Devices 62, 414 (2015).
T. Oka, T. Ina, Y. Ueno, and J. Nishii, Appl. Phys. Express 8, 054101 (2015).
S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, Jpn. J. Appl. Phys., Part 2 31, L139 (1992).
A. Castiglia, J. F. Carlin, and N. Grandjean, Appl. Phys. Lett. 98, 213505 (2011).
K. Orita, M. Meneghini, H. Ohno, N. Trivellin, N. Ikedo, S. Takigawa, M. Yuri, T. Tanaka, E. Zanoni, and G. Meneghesso, IEEE J. Quantum Electron. 48, 1169 (2012).
K. Ueno, E. Kishikawa, S. Inoue, J. Ohta, H. Fujioka, M. Oshima, and H. Fukuyama, Phys. Status Solidi RRL 8, 256 (2013).
E. Nakamura, K. Ueno, J. Ohta, H. Fujioka, and M. Oshima, Appl. Phys. Lett. 104, 051121 (2014).
J. W. Shon, J. Ohta, K. Ueno, A. Kobayashi, and H. Fujioka, Sci. Rep. 4, 5325 (2014).
T. Watanabe, J. Ohta, T. Kondo, M. Ohashi, K. Ueno, A. Kobayashi, and H. Fujioka, Appl. Phys. Lett. 104, 182111 (2014).
ASTM International, ASTM Standard F76, Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors (ASTM International, West Conshohocken, PA, 2011).
Y. Ohba and A. Hatano, J. Cryst. Growth 145, 214 (1994).
M. G. Cheong, K. S. Kim, C. S. Kim, R. J. Choi, H. S. Yoon, N. W. Namgung, E. K. Suh, and H. J. Lee, Appl. Phys. Lett. 80, 1001 (2002).
P. Kozodoy, S. Keller, S. P. DenBaars, and U. K. Mishra, J. Cryst. Growth 195, 265 (1998).
P. Kozodoy, S. P. DenBaars, and U. K. Mishra, J. Appl. Phys. 87, 770 (2000).
H. Okumura, D. Martin, M. Malinverni, and N. Grandjean, Appl. Phys. Lett. 108, 072102 (2016).
S. D. Burnham, G. NamKoong, D. C. Look, B. Clafin, and W. A. Doolittle, J. Appl. Phys. 104, 024902 (2008).
K. S. Kim, M. G. Cheong, C. H. Hong, G. M. Yang, K. Y. Lim, E. K. Suh, and H. J. Lee, Appl. Phys. Lett. 76, 1149 (2000).
M. Horita, S. Takashima, R. Tanaka, H. Matsuyama, K. Ueno, M. Edo, and J. Suda, Jpn. J. Appl. Phys., Part 1 55, 05FH03 (2016).
P. Kozodoy, H. Xing, S. P. DenBaars, and U. K. Mishra, J. Appl. Phys. 87, 1832 (2000).
J. S. Im, A. Moritz, F. Steuber, V. Härle, F. Scholz, and A. Hangleiter, Appl. Phys. Lett. 70, 631 (1997).
B. P. Gunning, C. A. M. Fabien, J. J. Merola, E. A. Clinton, W. A. Doolittle, S. Wang, A. M. Ficher, and F. A. Ponce, J. Appl. Phys. 117, 045710 (2015).

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We have grown Mg-doped GaN films with low residual hydrogen concentration using a low-temperature pulsed sputtering deposition (PSD) process. The growth system is inherently hydrogen-free, allowing us to obtain high-purity Mg-doped GaN films with residual hydrogen concentrations below 5 × 1016 cm−3, which is the detection limit of secondary ion mass spectroscopy. In the Mg profile, no memory effect or serious dopant diffusion was detected. The as-deposited Mg-doped GaN films showed clear p-type conductivity at room temperature (RT) without thermal activation. The GaN film doped with a low concentration of Mg (7.9 × 1017 cm−3) deposited by PSD showed hole mobilities of 34 and 62 cm2 V−1 s−1 at RT and 175 K, respectively, which are as high as those of films grown by a state-of-the-art metal-organic chemical vapor deposition apparatus. These results indicate that PSD is a powerful tool for the fabrication of GaN-based vertical power devices.


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