Index of content:
Volume 4, Issue 3, March 2016
- SPECIAL TOPIC: 2D SPINTRONICS
- Invited Articles
4(2016); http://dx.doi.org/10.1063/1.4941276View Description Hide Description
GeTe has been predicted to be the father compound of a new class of multifunctional materials,ferroelectric Rashba semiconductors, displaying a coupling between spin-dependent k-splitting and ferroelectricity. In this paper, we report on epitaxial Fe/GeTe(111) heterostructures grown by molecular beam epitaxy. Spin-pumping experiments have been performed in a radio-frequency cavity by pumping a spin current from the Fe layer into GeTe at the Fe ferromagnetic resonance and detecting the transverse charge current originated in the slab due to spin-to-charge conversion. Preliminary experiments indicate that a clear spin to charge conversion exists, thus unveiling the potential of GeTe for spin-orbitronics.