Index of content:
Volume 4, Issue 10, October 2016
- SPECIAL TOPIC: THERMOELECTRIC MATERIALS
- Invited Research Updates
4(2016); http://dx.doi.org/10.1063/1.4954227View Description Hide Description
Materials’ design for high-performance thermoelectric oxides is discussed. Since chemical stability at high temperature in air is a considerable advantage in oxides, we evaluate thermoelectric power factor in the high temperature limit. We show that highly disordered materials can be good thermoelectric materials at high temperatures, and the effects of strong correlation can further enhance the figure of merit by adding thermopower arising from the spin and orbital degrees of freedom. We also discuss the Kelvin formula as a promising expression for strongly correlated materials and show that the calculation based on the Kelvin formula can be directly compared with the cross-layer thermopower of layered materials.
4(2016); http://dx.doi.org/10.1063/1.4955027View Description Hide Description
We review the spin-Seebeck and magnon-electron drag effects in the context of solid-state energy conversion. These phenomena are driven by advective magnon-electron interactions. Heat flow through magnetic materials generates magnetization dynamics, which can strongly affect free electrons within or adjacent to the magnetic material, thereby producing magnetization-dependent (e.g., remnant) electric fields. The relative strength of spin-dependent interactions means that magnon-driven effects can generate significantly larger thermoelectric power factors as compared to classical thermoelectric phenomena. This is a surprising situation in which spin-based effects are larger than purely charge-based effects, potentially enabling new approaches to thermal energy conversion.
Research Update: Cu–S based synthetic minerals as efficient thermoelectric materials at medium temperatures4(2016); http://dx.doi.org/10.1063/1.4955398View Description Hide Description
Synthetic minerals and related systems based on Cu–S are attractive thermoelectric (TE) materials because of their environmentally benign characters and high figures of merit at around 700 K. This overview features the current examples including kesterite, binary copper sulfides, tetrahedrite, colusite, and chalcopyrite, with emphasis on their crystal structures and TE properties. This survey highlights the superior electronic properties in the p-type materials as well as the close relationship between crystal structures and thermophysical properties. We discuss the mechanisms of high power factor and low lattice thermal conductivity, approaching higher TE performances for the Cu–S based materials.
- Invited Articles
4(2016); http://dx.doi.org/10.1063/1.4950809View Description Hide Description
PbSe is an inexpensive alternative for PbTe as a mid-temperature thermoelectric material, but few investigations have been reported about its intrinsic properties despite recent efforts on doping techniques. In this work, pristine PbSe bulk materials were synthesized by a process combining mechanical alloying and spark plasma sintering, which is increasingly used for processing thermoelectric materials, and their electrical and thermal transport properties as well as thermoelectric performance were investigated in a wide temperature range. A maximum ZT ∼0.83 was obtained at 673 K in nominal composition PbSe + 3 or 4 at. % Pb, leading to nearly 50% enhancement from reported n-type pristine PbSe, mainly benefitting from the improved electrical performance. Furthermore, the potential thermoelectric efficiency was also improved due to the enhanced low-temperature performance, showing a high average ZT of 0.6 that is even comparable to that of commercial n-type Bi2Te3 materials.
4(2016); http://dx.doi.org/10.1063/1.4950994View Description Hide Description
We report a systematic study on the thermoelectric performance of spin Seebeck devices based on Fe3O4/Pt junction systems. We explore two types of device geometries: a spin Hall thermopile and spin Seebeck multilayer structures. The spin Hall thermopile increases the sensitivity of the spin Seebeck effect, while the increase in the sample internal resistance has a detrimental effect on the output power. We found that the spin Seebeck multilayers can overcome this limitation since the multilayers exhibit the enhancement of the thermoelectric voltage and the reduction of the internal resistance simultaneously, therefore resulting in significant power enhancement. This result demonstrates that the multilayer structures are useful for improving the thermoelectric performance of the spin Seebeck effect.
4(2016); http://dx.doi.org/10.1063/1.4952610View Description Hide Description
We present an investigation of the thermoelectric properties of cubic perovskite SrTiO3. The results are derived from a combination of calculated transport functions obtained from Boltzmann transport theory in the constant scattering time approximation based on the electronic structure and existing experimental data for La-doped SrTiO3. The figure of merit ZT is modeled with respect to carrier concentration and temperature. The model predicts a relatively high ZT at optimized doping and suggests that the ZT value can reach 0.7 at T = 1400 K. Thus ZT can be improved from the current experimental values by carrier concentration optimization.
4(2016); http://dx.doi.org/10.1063/1.4952994View Description Hide Description
Here we report the thermoelectric properties of NbCoSn-based n-type half-Heuslers (HHs) that were obtained through arc melting, ball milling, and hot pressing process. With 10% Sb substitution at the Sn site, we obtained enhanced n-type properties with a maximum power factor reaching ∼35 μW cm−1 K−2 and figure of merit (ZT) value ∼0.6 in NbCoSn0.9Sb0.1. The ZT is doubled compared to the previous report. In addition, the specific power cost ($ W−1) is decreased by ∼68% comparing to HfNiSn-based n-type HH because of the elimination of Hf.
4(2016); http://dx.doi.org/10.1063/1.4953439View Description Hide Description
In this study, a series of copper sulfides Cu xS with x spanning from 1.8 to 1.96 was prepared and their crystal structures, elemental valence states, and thermoelectric properties were systematically studied. The valence state of Cu in Cu xS is unchanged as the ratio of Cu/S varies, while the thermoelectric properties are very sensitive to the deficiency of Cu. In addition, the type of sulfur arrangement in the crystal structure also plays an important role on the electrical transports. Finally, the optimum Cu/S atomic ratios in the binary Cu xS system were identified for high power factor and thermoelectric figure of merit.
4(2016); http://dx.doi.org/10.1063/1.4953173View Description Hide Description
Temperature-dependent strength of Bi-Sb-Te under uniaxial compression is investigated. Bi-Sb-Te samples were produced by three methods: vertical zone-melting, hot extrusion, and spark plasma sintering (SPS). For zone-melted and extruded samples, the brittle-ductile transition occurs over a temperature range of 200-350 °C. In nanostructured samples produced via SPS, the transition is observed in a narrower temperature range of 170-200 °C. At room temperature, the strength of the nanostructured samples is higher than that of zone-melted and extruded samples, but above 300 °C, all samples decrease to roughly the same strength.
4(2016); http://dx.doi.org/10.1063/1.4955399View Description Hide Description
Electronic structures and thermoelectric transport properties of α-NaFeO2-type d 0-electron layered complex nitrides AMN2 (A = Sr or Na; M = Zr, Hf, Nb, Ta) were evaluated using density-functional theory and Boltzmann theory calculations. Despite the layered crystal structure, all materials had three-dimensional electronic structures. Sr(Zr, Hf)N2 exhibited isotropic electronic transport properties because of the contribution of the Sr 4d orbitals to the conduction band minimums (CBMs) in addition to that of the Zr 4d (Hf 5d) orbitals. Na(Nb,Ta)N2 showed weak anisotropic electronic transport properties due to the main contribution of the Nb 4d (Ta 5d) and N 2p orbitals to the CBMs and no contribution of the Na orbitals.
Suppression of lattice thermal conductivity by mass-conserving cation mutation in multi-component semiconductors4(2016); http://dx.doi.org/10.1063/1.4955401View Description Hide Description
In semiconductors almost all heat is conducted by phonons (lattice vibrations), which is limited by their quasi-particle lifetimes. Phonon-phonon interactions represent scattering mechanisms that produce thermal resistance. In thermoelectric materials, this resistance due to anharmonicity should be maximised for optimal performance. We use a first-principles lattice-dynamics approach to explore the changes in lattice dynamics across an isostructural series where the average atomic mass is conserved: ZnS to CuGaS2 to Cu2ZnGeS4. Our results demonstrate an enhancement of phonon interactions in the multernary materials and confirm that lattice thermal conductivity can be controlled independently of the average mass and local coordination environments.
4(2016); http://dx.doi.org/10.1063/1.4955400View Description Hide Description
We report the in-plane thermoelectric properties of suspended (Bi1−x Sb x)2Te3 nanoplates with x ranging from 0.07 to 0.95 and thicknesses ranging from 9 to 42 nm. The results presented here reveal a trend of increasing p-type behavior with increasing antimony concentration, and a maximum Seebeck coefficient and thermoelectric figure of merit at x ∼ 0.5. We additionally tuned extrinsic doping of the surface using a tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) coating. The lattice thermal conductivity is found to be below that for undoped ultrathin Bi2Te3 nanoplates of comparable thickness and in the range of 0.2–0.7 W m−1 K−1 at room temperature.
- Contributed Articles
4(2016); http://dx.doi.org/10.1063/1.4950947View Description Hide Description
Bi2Te3-based compounds are a well-known class of outstanding thermoelectric materials. β-As2Te3, another member of this family, exhibits promising thermoelectric properties around 400 K when appropriately doped. Herein, we investigate the high-temperature thermoelectric properties of the β-As2−xBixTe3 solid solution. Powder X-ray diffraction and scanning electron microscopy experiments showed that a solid solution only exists up to x = 0.035. We found that substituting Bi for As has a beneficial influence on the thermopower, which, combined with extremely low thermal conductivity values, results in a maximum ZT value of 0.7 at 423 K for x = 0.017 perpendicular to the pressing direction.
Tailoring of the electrical and thermal properties using ultra-short period non-symmetric superlattices4(2016); http://dx.doi.org/10.1063/1.4954499View Description Hide Description
Thermoelectric modules based on half-Heusler compounds offer a cheap and clean way to create eco-friendly electrical energy from waste heat. Here we study the impact of the period composition on the electrical and thermal properties in non-symmetric superlattices, where the ratio of components varies according to (TiNiSn)n:(HfNiSn)6−n, and 0 ⩽ n ⩽ 6 unit cells. The thermal conductivity (κ) showed a strong dependence on the material content achieving a minimum value for n = 3, whereas the highest value of the figure of merit ZT was achieved for n = 4. The measured κ can be well modeled using non-symmetric strain relaxation applied to the model of the series of thermal resistances.