Volume 8, Issue 5, May 2015
Index of content:
- ORGANIC ELECTRONICS AND PHOTONICS
Air-stable solution-processed n-channel organic thin film transistors with polymer-enhanced morphology106(2015); http://dx.doi.org/10.1063/1.4919677View Description Hide Description
N,N′-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDIF-CN2) is an n-type semiconductor exhibiting high electron mobility and excellent air stability. However, the reported electron mobility based on spin-coated PDIF-CN2 film is much lower than the value of PDIF-CN2 single crystals made from vapor phase deposition, indicating significant room for mobility enhancement. In this study, various insulating polymers, including poly(vinyl alcohol), poly(methyl methacrylate) (PMMA), and poly(alpha-methylstyrene) (PαMS), are pre-coated on silicon substrate aiming to enhance the morphology of the PDIF-CN2 thin film, thereby improving the charge transport and air stability. Atomic force microscopy images reveal that with the pre-deposition of PαMS or PMMA polymers, the morphology of the PDIF-CN2 polycrystalline films is optimized in semiconducting crystal connectivity, domain size, and surface roughness, which leads to significant improvement of organic thin-film transistor (OTFT) performance. Particularly, an electron mobility of up to 0.55 cm2/V s has been achieved from OTFTs based on the PDIF-CN2 film with the pre-deposition of PαMS polymer.
Efficiency enhancement in solution-processed organic small molecule: Fullerene solar cells via solvent vapor annealing106(2015); http://dx.doi.org/10.1063/1.4919707View Description Hide Description
We report highly efficient small molecule solar cells (SMSCs) by using dichloromethane solvent vapor annealing method. The resulted devices delivered a power conversion efficiency (PCE) of 8.3%, which is among the highest in SMSCs. Comparing to the control devices, the short circuit current (Jsc), fill factor, and PCE of solvent vapor annealed devices are significantly improved. Summarizing the results of optical absorption, film morphology, and charge carrier transporting properties, we see that the enhanced structure order and reduced size of phase separation are major reasons for the improved device performances, establishing a solid structure-property relationship. The solvent vapor annealing method can thus be a useful method in device fabrication to enhance performances of SMSCs.