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We show that photoconductors based on low-temperature-grown GaAs (LT-GaAs) can be efficiently operated by 1.55 m telecom wavelength by using metallic mirror based optical cavities. Two different semi-transparent front mirrors are compared: the first one is a thin gold layer, whereas the second one consists of a gold grating. Light absorption in grating mirror based optical cavities is numerically, analytically, and experimentally investigated allowing for an appropriate optical design. We show a 3 times improvement of the LT-GaAs photoconductor photoresponse by using, as front mirror, the gold grating once compared with the thin gold layer. It reaches around 0.5 mA/W under continuous wave, whereas a transient photoresistivity () as low as 5 Ω is deduced from dc photocurrents measured under femtosecond pulsed laser excitation. This work paves the way to efficient and reliable optoelectronics systems for GHz or THz waves sampling driven by 1.55 m pulsed lasers widely available.


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