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/content/aip/journal/apr2/2/3/10.1063/1.4929763
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/content/aip/journal/apr2/2/3/10.1063/1.4929763
2015-09-02
2016-12-04

Abstract

In this reply to the comment of Cowern , we demonstrate on the basis of full numerical simulations of radiation enhanced dopant diffusion via the kick-out mechanism that the / analysis fails to consistently describe boron (B) diffusion in germanium (Ge) under irradiation. Cowern missed to perform a consistency check with results for the diffusivity of Ge interstitials () determined from Ge self-diffusion under irradiation. Data deduced for from the exponential B profile reported by Cowern deviate several orders of magnitude from the self-diffusion study. This clearly disproves the validity of the kick-out mechanism to control radiation enhanced B diffusion in Ge. Exponential B profiles like those established in Ge under irradiation are also reported for silicon by Venezia [Phys. Rev. B , 125215 (2004)]. The characteristic shape is not described by the kick-out mechanism but rather explained qualitatively by the complex formation and dissolution of defect clusters. Modeling of B diffusion in Ge under irradiation performed by Schneider [Phys. Rev. B , 115202 (2013)] is fully consistent with self-diffusion under irradiation. This constraint led us to conclude that the characteristic B profiles are additionally affected by the formation of immobile B clusters. Although a direct microscopic proof of B cluster formation is still lacking, the report of Venezia on B clustering in Si during irradiation with similar exponential B profiles also supports our interpretation of B diffusion in Ge under irradiation.

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