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Electroosmotic flow in vapor deposited silicon dioxide and nitride microchannels
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/content/aip/journal/bmf/1/3/10.1063/1.2752376
2007-07-09
2014-10-21

Abstract

Electroosmotic flow was studied in thin film microchannels with silicon dioxide and silicon nitride sidewalls formed using plasma-enhanced chemical vapor deposition(PECVD). A sacrificial etching process was employed for channel fabrication allowing for cross-sections with heights of , ranging from to in width. Flow rates were measured for single channels and multichannel electroosmotic pump structures for levels ranging from 2.6 to 8.3, and zeta potentials were calculated for both silicon dioxide and silicon nitride surfaces. Flow rates as high as were measured for nitride multichannel pumps at applied electric fields of 300 V/mm. The surface characteristics of PECVD nitride were analyzed and compared to more well-known oxide surfaces to determine the density of amine sites compared to silanol sites.

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Scitation: Electroosmotic flow in vapor deposited silicon dioxide and nitride microchannels
http://aip.metastore.ingenta.com/content/aip/journal/bmf/1/3/10.1063/1.2752376
10.1063/1.2752376
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