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Optical properties of low-strained quantum dot structures at the two-dimensional–three-dimensional growth transition
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10.1063/1.2208296
/content/aip/journal/jap/100/1/10.1063/1.2208296
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/1/10.1063/1.2208296

Figures

Image of FIG. 1.
FIG. 1.

Surface SEM images for three uncapped structures with In content: (a) 27%, (b) 30%, and (c) 33%.

Image of FIG. 2.
FIG. 2.

A PR spectrum for quantum well.

Image of FIG. 3.
FIG. 3.

Energy level calculations for QW vs well width and for a few band offset ratios (treated as a semi-free parameter).

Image of FIG. 4.
FIG. 4.

Low temperature PR spectra for QD structures with various In contents from 27% to 36%.

Image of FIG. 5.
FIG. 5.

Low temperature PL spectra for QD structures with various In contents from 27% to 36%.

Tables

Generic image for table
Table I.

Determined WL thickness based on PR spectra for QD structures with various In contents expressed in nanometers and monolayers.

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/content/aip/journal/jap/100/1/10.1063/1.2208296
2006-07-06
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical properties of low-strained InxGa1−xAs∕GaAs quantum dot structures at the two-dimensional–three-dimensional growth transition
http://aip.metastore.ingenta.com/content/aip/journal/jap/100/1/10.1063/1.2208296
10.1063/1.2208296
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